Silicon Nitride Recess Filling with Depth-Tuned Inhibition Layers
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Solution Overview
Problem
Existing methods face challenges in effectively embedding a silicon nitride film into recesses of a substrate, often resulting in voids and seams due to uneven film formation.
Innovation Solution
A film-forming method involving the formation of an inhibition layer using aminosilane followed by atomic layer deposition (ALD) cycles, where the inhibition layer thickness varies along the recess depth to control silicon nitride film growth, ensuring thicker deposition at the lower portion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional film formation methods are used to embed silicon nitride film into recess, then film deposition occurs, but voids and seams form due to uneven film thickness distribution
Solution Approach 1:
An inhibition layer is formed on the recess surface before silicon nitride film deposition. This preliminary action modifies the surface properties to control subsequent film growth, ensuring uniform thickness distribution and preventing void formation during embedding.
Solution Approach 2:
The inhibition layer is selectively formed on the recess surface with varying thickness distribution - thicker at the top and thinner at the bottom. This local variation in layer properties controls the silicon nitride film growth rate at different positions, achieving uniform final film thickness throughout the recess.
2Manufacturing precision
If inhibition layer is formed to control film growth, then film thickness distribution improves, but process complexity increases
Solution Approach 1:
The inhibition layer formation and silicon nitride film deposition are integrated into a sequential process where the inhibition layer serves dual purposes: as a growth control layer and as a template for uniform film formation. This merging reduces the need for additional separate control steps.
Solution Approach 2:
The process controls film thickness distribution by varying the inhibition layer thickness parameter across the recess surface. By adjusting this single parameter during inhibition layer formation, uniform silicon nitride film growth is achieved without adding complex process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces voids and seams, improving the embedding properties of the silicon nitride film within the recess by controlling film thickness distribution.
Implementation Method 1
supplying aminosilane to the substrate, and forming an inhibition layer over a surface of the recess
Implementation Method 2
forming a silicon nitride film over the surface of the recess by performing a cycle a first number of times, the cycle including supplying a silicon raw material to the substrate, and supplying a nitriding agent to the substrate
Data Source
AI summary
A film-forming method includes (a) providing a substrate including a recess; (b) supplying aminosilane to the substrate, and forming an inhibition layer over a surface of the recess; (c) forming a silicon nitride film over the surface of the recess by performing a cycle a first number of times, the cycle including supplying a silicon raw material to the substrate, and supplying a nitriding agent to the substrate at a timing different from the supply of the silicon raw material to the substrate; and (d) repeatedly performing (b) and (c) in order of (b) and (c).