Ammonia Alkanol Composition for Sub-50nm Pattern Collapse Prevention
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Solution Overview
Problem
Current methods for manufacturing integrated circuits and other precision devices with patterns below 50 nm suffer from pattern collapse due to capillary forces during wet chemical processing, and existing anti-pattern collapse compositions either fail to prevent collapse or leave residues on the substrate.
Innovation Solution
A two-component composition consisting of 0.1 to 3% by weight ammonia and a C1 to C4 alkanol is used for treating patterned material layers with line-space dimensions of 50 nm or below, which effectively reduces pattern collapse and allows for easy removal of residues without compromising the integrity of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional wet chemical processing is used for sub-50 nm patterns, then manufacturing process is simple, but pattern collapse occurs due to capillary forces
Solution Approach 1:
The patent changes the chemical composition parameters of the rinse solution by incorporating ammonia and organic solvents in specific ratios. This modifies the solution's properties to reduce capillary forces while maintaining cleaning effectiveness, thereby preventing pattern collapse without complicating the processing steps
Solution Approach 2:
The patent uses a composite rinse solution comprising ammonia and organic solvents (such as isopropanol, ethanol, or methanol) in specific concentration ranges. This composite composition combines the benefits of both components to achieve reduced surface tension and minimized capillary forces, preventing pattern collapse while keeping the process simple
2Manufacturing precision
If existing anti-pattern collapse compositions are used, then pattern collapse is reduced, but non-volatile residues remain on the substrate
Solution Approach 1:
The patent employs volatile organic solvents with short residence times on the substrate. These solvents evaporate completely after rinsing, leaving no non-volatile residues. The use of volatile components ensures the substrate remains clean while still providing pattern collapse protection during the rinsing process
Solution Approach 2:
The patent carefully controls the concentration parameters of ammonia (0.1-5% by weight) and organic solvents to optimize the balance between pattern collapse prevention and residue minimization. By adjusting these compositional parameters, the solution achieves effective capillary force reduction while maintaining complete volatility and leaving no harmful residues
3Quantity of substance
If rinse solution with high capillary forces is used, then cleaning effectiveness is high, but pattern collapse increases
Solution Approach 1:
The patent modifies the surface tension parameters of the rinse solution by adding ammonia and organic solvents. This changes the wetting and capillary properties of the solution, reducing capillary forces to levels that prevent pattern collapse while maintaining sufficient cleaning capability through controlled wetting of the substrate surface
Solution Approach 2:
The ammonia and organic solvent components act as intermediaries that mediate between the liquid phase and the patterned substrate. They reduce the direct capillary interaction between the rinse solution and the delicate sub-50 nm patterns, thereby protecting pattern integrity while still enabling effective particle and residue removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly reduces pattern collapse rates in high aspect ratio structures, particularly for nodes below 22 nm, and ensures complete removal of non-volatile additives, outperforming previous solutions in maintaining the stability of sub-50 nm features.
Implementation Method 1
These structures may suffer from bending and/or collapsing, in particular, during the spin dry process, due to excessive capillary forces of the liquid or solution of the rinsing liquid deionized water remaining from the chemical rinse and spin dry processes
Implementation Method 2
a method of modifying a surface of a high aspect ratio feature by contacting the surface of the high aspect ratio feature with an additive composition to produce a modified surface
Data Source
AI summary
Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C1 to C4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.