Ammonia Cleaning Parameters for Semiconductor Bonding Interface
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Solution Overview
Problem
The existing semiconductor bonding methods often result in poor contact at the bonding interface, particularly on the opposite side of the substrate opening, which affects the bonding quality.
Innovation Solution
A method involving cleaning a first amorphous surface and a second crystal surface with ammonia before bonding, where at least one parameter (concentration or temperature) for cleaning the amorphous surface is higher than that for the crystal surface, using an ammonia buffer solution, to reduce bonding activity and facilitate close contact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If uniform ammonia cleaning is applied to both amorphous and crystal surfaces, then cleaning efficiency is maintained, but bonding interface contact quality deteriorates due to poor contact on the opposite side of substrate opening
Solution Approach 1:
The patent applies different ammonia cleaning parameters to different surface types: amorphous surfaces (e.g., SiO2) are cleaned with higher ammonia concentration (e.g., 10-30%) and/or temperature (e.g., 60-80°C), while crystal surfaces (e.g., Si) are cleaned with lower ammonia concentration (e.g., 1-5%) and/or temperature (e.g., 20-40°C). This localized differentiation optimizes cleaning effectiveness for each surface type while preventing excessive bonding activity on crystal surfaces, thereby ensuring uniform bonding interface contact quality across the entire substrate including regions opposite openings.
Solution Approach 2:
The patent changes the cleaning parameters (ammonia concentration and temperature) based on the surface type being cleaned. By adjusting these parameters differently for amorphous versus crystal surfaces, the patent controls the bonding activity of each surface type, reducing the propagation speed of the bonding wave on crystal surfaces to facilitate close contact at the bonding interface, particularly in regions opposite substrate openings where poor contact previously occurred.
2Manufacturing precision
If high ammonia concentration and temperature are used for cleaning, then cleaning effectiveness is improved, but bonding activity increases causing faster bonding wave propagation and poor interface contact
Solution Approach 1:
The patent differentiates cleaning parameters based on surface type: amorphous surfaces receive high ammonia concentration and temperature to ensure thorough cleaning, while crystal surfaces receive low ammonia concentration and temperature to suppress excessive bonding activity. This localized parameter differentiation allows the bonding wave to propagate at controlled speeds, ensuring close contact at the bonding interface without the harmful effects of overly rapid bonding propagation.
Solution Approach 2:
The patent adjusts ammonia cleaning parameters (concentration and temperature) according to the specific surface material properties. For crystal surfaces, lower parameters reduce bonding activity and slow down the bonding wave propagation speed, while for amorphous surfaces, higher parameters ensure adequate cleaning. This parameter optimization resolves the contradiction between cleaning effectiveness and bonding wave speed control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the propagation speed of the bonding wave, ensuring closer contact between the bonding interfaces and improving bonding quality by adjusting ammonia concentration and temperature parameters.
Implementation Method 1
cleaning the first surface and the second surface with ammonia respectively before bonding
Data Source
AI summary
The present disclosure provides a method for cleaning a bonding interface before bonding. The method includes: providing a first surface and a second surface for bonding, the first surface being a non-crystal surface and the second surface being a crystal surface; and cleaning the first surface and the second surface with ammonia respectively before bonding, wherein at least one of parameters of an ammonia concentration and a cleaning temperature for cleaning the first surface is higher than a counterpart of parameters for cleaning the second surface.