AMOLED Aperture Ratio via Vertical Stacking and Layer Merging
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Solution Overview
Problem
The manufacturing process of active matrix organic light-emitting diodes is complex, costly, and inefficient, with a low aperture ratio due to the large number of layers and masks used, which affects product quality and efficiency.
Innovation Solution
The process involves forming a thin-film transistor on a substrate with a semiconductor layer, gate insulation, and metal terminals, followed by a transparent conductive layer and metal layer coating, using masking processes to define conductive and emission zones, reducing the number of masks and insulation layers, and positioning the organic light-emitting diode body above the transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple insulation layers and masks are used in the manufacturing process, then the device structure is more complete, but the manufacturing complexity increases and aperture ratio decreases
Solution Approach 1:
The patent merges multiple insulation layers into a single insulation layer that integrates the functions of previous separate insulation layers. This single layer contains openings for both the electrode and organic light-emitting diode body, combining what were previously separate masking steps into one unified structure, thereby reducing manufacturing complexity while maintaining device completeness
Solution Approach 2:
The single insulation layer serves multiple functions simultaneously: it acts as the gate insulation layer for the thin-film transistor, provides electrical insulation, and defines the openings for both the electrode and organic light-emitting diode body. This multi-functional design eliminates the need for separate insulation layers and masks for different components
2Reliability
If multiple insulation layers and masks are used in the manufacturing process, then the device structure is more complete, but the manufacturing cost increases
Solution Approach 1:
By merging multiple insulation layers and masking steps into a single insulation layer with integrated openings, the patent reduces the total number of manufacturing steps. This consolidation directly lowers material costs (fewer masks and insulation layer materials), reduces processing costs (fewer deposition and etching cycles), and decreases overall manufacturing expenditure while preserving device structure integrity
3Reliability
If multiple insulation layers and masks are used in the manufacturing process, then the device structure is more complete, but the manufacturing efficiency decreases
Solution Approach 1:
The patent combines multiple sequential manufacturing steps (depositing separate insulation layers, applying multiple masks, performing multiple etching steps) into a single integrated process. This reduces the total manufacturing cycle time, increases throughput, and improves production efficiency while the single insulation layer with pre-defined openings ensures complete device structure formation in fewer steps
4Reliability
If storage capacitor occupies large area, then the capacitance is sufficient, but the aperture ratio of pixel unit decreases
Solution Approach 1:
The patent positions the organic light-emitting diode body above the thin-film transistor in a vertical arrangement, utilizing the third dimension (height/vertical space) rather than consuming horizontal pixel area. This vertical stacking allows the storage capacitor to maintain sufficient capacitance within the transistor structure while the light-emitting diode body occupies the vertical space above, thereby preserving a large aperture ratio
Data Source
AI summary
The present invention provides an active matrix organic light-emitting diode and a manufacturing method thereof. The active matrix organic light-emitting diode includes an organic light-emitting diode body and a thin-film transistor electrically connected to the organic light-emitting diode body. The thin-film transistor is formed on a substrate and includes semiconductor layer formed on the substrate, a gate insulation layer formed on the semiconductor layer, a gate terminal formed on the gate insulation layer, a protection layer formed on the gate terminal, and a source terminal and a drain terminal formed on the protection layer. The light-emitting diode body includes an anode formed on the protection layer and electrically connected to the thin-film transistor, an organic light emission layer formed on the anode, and a cathode formed on the organic light emission layer. The organic light-emitting diode body is arranged to be positioned above the thin-film transistor in an alternate manner.