Amorphous 2D Channel Doping via Ion Implantation and Annealing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Forming doped ultrathin 2-D layers, particularly in memory devices, is challenging due to difficulties in controlling the structure and electrical properties of channel layers with thicknesses below 10 nm, as conventional doping methods like ion implantation struggle to achieve conformality and crystallinity.
Innovation Solution
A method involving the deposition of an amorphous 2-D material layer, followed by ion implantation of a dopant and subsequent rapid thermal annealing to form a doped crystalline layer, which allows for controlled doping and crystallization of the channel material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If ion implantation is performed directly on crystalline 2-D layers, then doping can be achieved, but the structure of thin layers deteriorates and crystallinity is lost
Solution Approach 1:
The patent applies preliminary action by depositing the 2-D material layer in an amorphous state before ion implantation. This amorphous phase serves as a buffer that can accommodate the ion implantation process without losing structural integrity. After doping, a subsequent annealing step restores the crystalline structure, thus achieving both doping and preserving crystallinity through a pre-planned sequence of actions.
Solution Approach 2:
The patent utilizes parameter changes by transitioning the material phase from amorphous to crystalline through controlled annealing. The amorphous phase is deposited first, allowing ion implantation, then thermal energy is applied to transform the structure back to crystalline, thereby changing the physical state parameter to resolve the contradiction between doping and structure preservation.
2Length of moving object
If layer thickness is reduced below 10 nm to achieve ultrathin 2-D channels, then device performance improves, but control of channel layer growth and doping becomes more challenging
Solution Approach 1:
The patent changes the phase parameter of the 2-D material from crystalline to amorphous during deposition. This parameter change enables better control over the ultrathin layer formation and doping process. The amorphous phase allows for more uniform ion implantation in ultrathin layers, and subsequent annealing restores crystallinity, thus achieving precise doping control in sub-10nm channels.
3Quantity of substance
If conventional doping methods are used on ultrathin 2-D layers, then doping can be achieved, but conformality deteriorates
Solution Approach 1:
The patent changes the structural parameter of the 2-D layer from crystalline to amorphous, which fundamentally alters how the material responds to ion implantation. The amorphous structure provides more uniform ion penetration and dopant distribution across the ultrathin layer, achieving conformal doping that would be difficult in crystalline structures where grain boundaries and defects cause non-uniform doping.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of doped crystalline 2-D channel layers with superior electrical properties and microstructure, minimizing substrate damage and requiring fewer processing steps, while ensuring the crystallinity and orientation necessary for device performance.
Implementation Method 1
implanting an implant species into the amorphous layer
Implementation Method 2
annealing the amorphous layer after the implanting
Implementation Method 3
the amorphous layer forms a doped crystalline layer
Data Source
AI summary
A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.