Amorphous Carbon Hard Mask for High Resolution Semiconductor Patterning
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Solution Overview
Problem
Conventional semiconductor manufacturing processes face challenges in achieving high resolution and pattern transfer accuracy due to the limitations of thinner photoresist layers and increased costs with larger DUV photolithographic machines, while conventional hard masks complicate the process and lead to pollution.
Innovation Solution
A fabrication method using a patterned amorphous carbon (α-C) layer to adjust the pattern pitch of a hard mask, allowing for high selectivity and low reflectivity, enabling the use of thinner photoresist layers and 248 um DUV machines, with the α-C layer being easily removable to reduce manufacturing time and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thinner photoresist layer is used to increase resolution, then the resolution is improved, but the substrate shielding capability deteriorates
Solution Approach 1:
An amorphous carbon layer is introduced as an intermediary between the photoresist layer and the substrate. This intermediate layer provides the necessary shielding function that the thinner photoresist layer cannot achieve alone, while not interfering with the high-resolution patterning capability of the thin photoresist.
2Manufacturing precision
If conventional hard mask is used to improve pattern transfer accuracy, then the pattern transfer accuracy is improved, but the process complexity increases
Solution Approach 1:
The patent extracts the essential function of the hard mask (pattern transfer) and combines it with the photoresist layer by forming the amorphous carbon layer directly on the photoresist. This eliminates the need for separate hard mask deposition and removal steps, simplifying the overall process while maintaining pattern transfer accuracy.
3Manufacturing precision
If conventional hard mask is used to improve pattern transfer accuracy, then the pattern transfer accuracy is improved, but the manufacturing time increases
Solution Approach 1:
The patent merges the photoresist layer and hard mask function into a single integrated structure. The amorphous carbon layer is formed directly on the patterned photoresist, combining the patterning and hard mask functions into one step, thereby reducing the total number of process steps and manufacturing time.
4Manufacturing precision
If conventional hard mask is used to improve pattern transfer accuracy, then the pattern transfer accuracy is improved, but the pollution increases
Solution Approach 1:
The patent changes the material parameter from conventional hard mask materials (oxides, nitrides) to amorphous carbon. This material substitution allows for easier and cleaner removal through oxygen plasma ashing, eliminating pollution issues while maintaining the necessary pattern transfer accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves resolution and pattern pitch comparable to 193 um DUV processes while simplifying the removal of photoresist and mask layers, reducing manufacturing time and cost, and improving pattern transfer quality.
Implementation Method 1
a patterned amorphous carbon (α-C) layer is formed on the substrate
Implementation Method 2
a patterned amorphous carbon (α-C) layer is formed on a substrate by etching an α-C layer covering the substrate through a plasma O2 etching process
Data Source
AI summary
A fabrication method of an electronic device is provided. First, a substrate is provided. Then, a patterned amorphous carbon (α-C) layer is formed on the substrate and exposes part of the substrate. Next, a first α-C layer covering the patterned α-C layer and part of the substrate is formed. Then, part of the substrate and part of the first α-C layer covering part of the substrate are removed, so as to form a patterned substrate and a second α-C layer.