Amorphous Fe-Dy-Tb Semiconductor for Transparent Spintronics
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Solution Overview
Problem
Current amorphous semiconductor materials face challenges in combining room temperature ferromagnetism, transparency, and semiconductor behavior, while also being cost-effective and abundant, which is crucial for advancing spintronic technologies and reducing the cost of computer and display technologies.
Innovation Solution
An amorphous semiconductor composition comprising 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, and 15 to 35 atomic percent terbium, with a balance of oxidizing or reducing elements, exhibiting an essentially amorphous microstructure, optical transmittance of at least 50% in the visible spectrum, and semiconductor electrical properties, achieved through methods like pulsed laser deposition at low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If amorphous semiconductor materials are used to achieve low processing temperatures and ease of fabrication, then manufacturing cost and ease of manufacture are improved, but the ability to combine room temperature ferromagnetism with transparency and semiconductor behavior is not achieved
Solution Approach 1:
The patent employs composite materials by combining multiple elements (In, Ga, Fe, Dy, Tb, Zn, O) to form an amorphous oxide semiconductor alloy. This composite approach enables the material to simultaneously exhibit ferromagnetism, optical transparency, and semiconductor behavior at room temperature, resolving the contradiction between ease of manufacture and functional versatility.
Solution Approach 2:
The patent utilizes parameter changes by controlling the amorphous structure and compositional ratios of the oxide semiconductor. By maintaining an amorphous phase and adjusting element concentrations, the material achieves room temperature ferromagnetism while preserving transparency and semiconductor properties, enabling multiple functions in a single material system.
2Reliability
If Indium-based amorphous oxide semiconductors are used to achieve high carrier hall mobility, then semiconductor performance is improved, but material cost increases due to Indium scarcity
Solution Approach 1:
The patent replaces expensive and scarce Indium with more abundant and cost-effective elements such as Gallium, Iron, Dysprosium, and Terbium in oxide semiconductor compounds. This substitution maintains high carrier Hall mobility while significantly reducing material cost and addressing supply chain concerns associated with Indium scarcity.
Solution Approach 2:
The patent changes the compositional parameters by substituting Indium with alternative elements in the oxide semiconductor structure. By adjusting the ratios of Ga, Fe, Dy, Tb, and Zn in the amorphous oxide matrix, the material achieves comparable or superior electrical performance to Indium-based materials while using more abundant and cost-effective constituents.
3Reliability
If crystalline thin films are used to achieve ferromagnetism, then magnetic properties are improved, but processing complexity and cost increase
Solution Approach 1:
The patent changes the structural parameter from crystalline to amorphous phase while incorporating ferromagnetic elements (Fe, Dy, Tb). This parameter change enables the material to exhibit room temperature ferromagnetism without requiring complex crystalline structures, thereby simplifying the deposition and processing procedures while maintaining magnetic functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition demonstrates high carrier hall mobility, room temperature ferromagnetism, mechanical flexibility, and reduced manufacturing costs, enabling the development of cost-effective, transparent semiconductor devices suitable for spintronic and display technologies.
Implementation Method 1
semiconductor electrical properties
Implementation Method 2
high carrier hall mobility
Implementation Method 3
room temperature ferromagnetism
Implementation Method 4
essentially amorphous microstructure
Data Source
AI summary
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.