Ion-Implanted Amorphous GaN Waveguides for Micro-LED Extraction
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Solution Overview
Problem
The light extraction efficiency of micro-LEDs is limited by total internal reflection due to the refractive index difference between crystalline GaN and output materials, and conventional methods like physical etching increase non-radiative recombination and are not applicable to commercial GaN LED wafers.
Innovation Solution
Exposing a GaN layer to ion implantation to create amorphous regions with non-uniform refractive indexes, which modify the propagation paths of light rays and increase light extraction efficiency by directing them into predetermined paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If physical etching is used to redirect light rays, then light extraction efficiency is improved, but device size increases and non-radiative recombination increases
Solution Approach 1:
The patent changes the physical state of the GaN layer from crystalline to amorphous through ion implantation, fundamentally altering the refractive index parameter. This enables light extraction enhancement without requiring physical etching structures, thereby avoiding device size increase while maintaining high light extraction efficiency
Solution Approach 2:
The patent replaces the mechanical physical etching process with an ion implantation process that modifies the material's optical properties. Instead of using mechanical structures to redirect light, the patent uses controlled ion bombardment to create amorphous regions with different refractive indexes, achieving the same light extraction goal without mechanical intervention
2Productivity
If physical etching is used to redirect light rays, then light extraction efficiency is improved, but non-radiative recombination increases
Solution Approach 1:
The patent changes the physical state of the GaN layer from crystalline to amorphous through ion implantation, fundamentally altering the refractive index parameter. This enables light extraction enhancement without requiring physical etching structures, thereby avoiding device size increase while maintaining high light extraction efficiency
Solution Approach 2:
The patent replaces the mechanical physical etching process with an ion implantation process that modifies the material's optical properties. Instead of using mechanical structures to redirect light, the patent uses controlled ion bombardment to create amorphous regions with different refractive indexes, achieving the same light extraction goal without mechanical intervention
3Productivity
If conventional methods are used to increase light extraction, then light extraction efficiency is improved, but applicability to commercial GaN LED wafers is reduced
Solution Approach 1:
The patent changes the physical state of the GaN layer from crystalline to amorphous through ion implantation, fundamentally altering the refractive index parameter. This enables light extraction enhancement without requiring physical etching structures, thereby avoiding device size increase while maintaining high light extraction efficiency
Solution Approach 2:
The patent replaces the mechanical physical etching process with an ion implantation process that modifies the material's optical properties. Instead of using mechanical structures to redirect light, the patent uses controlled ion bombardment to create amorphous regions with different refractive indexes, achieving the same light extraction goal without mechanical intervention
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances light extraction efficiency by reducing internal reflection and stabilizing the amorphous form, allowing for improved focus and depth of field in micro-LEDs without increasing the size of the LEDs.
Implementation Method 1
Ion implantation is carried out into a GaN layer of mLEDs to partially or fully convert one or more regions of the crystalline GaN layer to amorphous GaN
Implementation Method 2
convert one or more regions of the crystalline GaN layer to amorphous GaN
Implementation Method 3
the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays
Implementation Method 4
The ion implanted regions direct light rays that propagate along predetermined directions into predetermined propagation paths thereby to modify the angle of incidence of these light rays
Data Source
AI summary
Ion implantation is carried out into a GaN layer of mLEDs to partially or fully convert one or more regions of the crystalline GaN layer to amorphous GaN. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions can be implanted in a region around an active region that emits light to function as an optical waveguide. The ion implanted regions direct light rays that propagate along predetermined directions into predetermined propagation paths thereby to modify the angle of incidence of these light rays. As such, the light extraction efficiency of the mLEDs is increased.