Amorphous In2(S1-x,Se)x Buffer Layer for Solar Cells
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current thin-film solar cells based on Cu(In,Ga)(S,Se)2 require a buffer layer, but existing buffer materials like CdS are toxic, costly, and inefficient, leading to reduced solar cell efficiency and stability due to light, heat, and moisture exposure.
Innovation Solution
A layer system comprising an amorphous In2(S1-x,Se)x buffer layer with a chalcopyrite structure, which is deposited in a vacuum process, providing high efficiency and stability without toxic substances, and allowing for lower production costs and environmental impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CdS buffer layer is used, then electronic matching between absorber and front electrode is improved, but toxicity and production costs increase
Solution Approach 1:
The patent replaces toxic CdS with In2(S1-x,Sex)3+δ which can be deposited as an amorphous layer without requiring the same level of safety precautions and waste disposal infrastructure, effectively substituting a harmful material with a benign alternative that achieves the same electronic matching function
Solution Approach 2:
The patent changes the material composition from cadmium-based to indium-based compounds, specifically using In2(S1-x,Sex)3+δ with adjustable sulfur and selenium content to optimize both the electronic properties and environmental compatibility of the buffer layer
2Reliability
If CdS buffer layer is used, then electronic matching is improved, but manufacturing complexity and safety precautions increase
Solution Approach 1:
The patent replaces toxic CdS with In2(S1-x,Sex)3+δ which can be deposited as an amorphous layer without requiring the same level of safety precautions and waste disposal infrastructure, effectively substituting a harmful material with a benign alternative that achieves the same electronic matching function
Solution Approach 2:
The patent changes the material composition from cadmium-based to indium-based compounds, specifically using In2(S1-x,Sex)3+δ with adjustable sulfur and selenium content to optimize both the electronic properties and environmental compatibility of the buffer layer
3Reliability
If CdS buffer layer is used, then buffer function is achieved, but light absorption increases reducing cell efficiency
Solution Approach 1:
The patent modifies the band gap of the buffer layer by adjusting the sulfur and selenium content in In2(S1-x,Sex)3+δ, creating an optimal energy level alignment that maintains electronic function while minimizing optical absorption in the visible spectrum
Solution Approach 2:
The patent uses a composite approach by combining indium sulfide and indium selenide in specific ratios within the In2(S1-x,Sex)3+δ structure, allowing simultaneous optimization of electronic band alignment and optical transparency properties
4Reliability
If CdS buffer layer is used, then buffer function is achieved, but stability under light, heat and moisture exposure deteriorates
Solution Approach 1:
The patent modifies the band gap of the buffer layer by adjusting the sulfur and selenium content in In2(S1-x,Sex)3+δ, creating an optimal energy level alignment that maintains electronic function while minimizing optical absorption in the visible spectrum
Solution Approach 2:
The patent uses a composite approach by combining indium sulfide and indium selenide in specific ratios within the In2(S1-x,Sex)3+δ structure, allowing simultaneous optimization of electronic band alignment and optical transparency properties
5Manufacturing precision
If wet-chemical CBD process is used for CdS deposition, then buffer layer quality is improved, but process compatibility with production flow deteriorates
Solution Approach 1:
The patent replaces the wet-chemical CBD process with a vacuum-based physical vapor deposition process for depositing In2(S1-x,Sex)3+δ, eliminating the need for aqueous chemistry and enabling direct integration into existing vacuum-based thin-film fabrication lines
Solution Approach 2:
The patent uses vacuum deposition to create an inert environment during buffer layer formation, avoiding the need for chemical baths and enabling process integration with other vacuum-based semiconductor fabrication steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The amorphous In2(S1-x,Se)x buffer layer achieves solar cell efficiencies comparable to CdS, with improved stability against temperature, light, and moisture, and reduced light absorption, resulting in higher electrical output and cost-effectiveness.
Implementation Method 1
Thin-film systems for solar cells and solar modules are well known and available on the market in various designs, depending on the substrate and the materials applied. The materials are selected in such a way that the incident solar spectrum is used to the maximum.
Implementation Method 2
CdS is a direct semiconductor with a direct electronic band gap of around 2.4 eV and is therefore already present in a Cu(In,Ga)(S,Se) 2/CdS/ZnO solar cell at CdS Layer thicknesses of a few 10 nm absorb the incident light.
Implementation Method 3
It also offers protection against sputter damage in the subsequent process step of depositing the front electrode using DC magnetron sputtering.
Data Source
Figure 1
Figure 2
Figure 3
AI summary
The present invention relates to a layer system (1) for thin-film solar cells and solar modules based on CIS-absorbers (4). The layer system (1) according to the invention has a buffer layer (4) made of In2(S1−x,Sex)3+δ, wherein 0≦̸x≦̸1 and −1≦̸δ≦̸1. Additionally, the buffer layer (5) is amorphously designed. With this buffer layer (5), the disadvantages of CdS-buffers frequently used to date, namely toxicity and poor process integration, are overcome, whereby in addition to high efficiency, high long-term stability is also achieved; and thus again the disadvantages of conventional buffer layers alternative to CdS do not exist.