Amorphous Semiconductor Optical Modulator with Single Crystal Silicon Contacts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The use of amorphous semiconductors in optical modulators results in high element resistance and increased power consumption due to low carrier mobility, which is not effectively addressed by existing technologies.
Innovation Solution
An optical modulator design featuring a core made of amorphous semiconductor material with p-type and n-type layers formed from single crystal silicon, which reduces element resistance and the amount of current injected by utilizing low resistance paths for carrier injection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If an amorphous semiconductor is used for the core to reduce free carrier absorption, then light modulation efficiency is improved, but element resistance increases and power consumption increases
Solution Approach 1:
The patent applies different material qualities to different regions: the core uses amorphous semiconductor for low absorption, while the contact regions use single crystal silicon for low resistance. This local differentiation resolves the contradiction between reducing absorption loss and maintaining low power consumption.
Solution Approach 2:
The patent creates a composite structure combining amorphous semiconductor (core) with single crystal silicon (contact layers). This composite approach allows the system to simultaneously achieve the advantages of both materials: low absorption in the core and low resistance at contacts.
2Reliability
If an amorphous semiconductor is used for the core to improve light modulation, then optical performance is improved, but element resistance increases
Solution Approach 1:
The patent differentiates material properties by location: amorphous semiconductor in the optical core for modulation performance, single crystal silicon at contacts for electrical performance. This resolves the contradiction between optical reliability and electrical resistance.
Solution Approach 2:
The single crystal silicon contact layers act as intermediary elements between the amorphous semiconductor core and the electrodes, providing a low-resistance electrical path without compromising the optical properties of the core.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively curbs the increase in element resistance and reduces the amount of current injected, thereby lowering power consumption while maintaining light modulation capabilities.
Implementation Method 1
the intensity and phase of light are modulated using a carrier plasma effect in silicon optical modulators
Implementation Method 2
the intensity and phase of light are modulated using a carrier plasma effect in silicon optical modulators
Data Source
AI summary
A core, constituted by an amorphous undoped semiconductor (i type), which is formed on a lower clad layer, and a p-type layer and an n-type layer which are disposed on the lower clad layer with the core interposed therebetween and are formed in contact with the core are provided. The core is formed to be thicker than the p-type layer and the n-type layer. The p-type layer and the n-type layer are constituted by single crystal silicon.