Amorphous Oxide Thin-Film Bonding Without Conductive Interfaces
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Solution Overview
Problem
Existing atomic diffusion bonding methods require the formation of a metal or semi-metal bonding film, which necessitate additional processes like oxidation and heat treatment, complicating mass production and limiting the application to high brightness and electronic devices due to light absorption and conductivity issues at the bonding interface.
Innovation Solution
A chemical bonding method using amorphous oxide thin films with increased defects, formed by rapid cooling of raw material atoms, allows bonding without an oxide base layer or post-bonding heat treatment, facilitating atomic diffusion and chemical bonding at the interface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a metal or semi-metal bonding film is used for atomic diffusion bonding, then bonding strength is improved, but light absorption and electrical conductivity at the bonding interface increase, limiting application to high brightness and electronic devices
Solution Approach 1:
The patent changes the material parameter from metal/semi-metal to oxide, and changes the structural parameter from crystalline to amorphous. This transformation fundamentally alters the optical and electrical properties of the bonding film, eliminating light absorption and electrical conductivity while maintaining bonding strength through chemical bonding mechanisms.
Solution Approach 2:
The patent creates a composite bonding structure using amorphous oxide thin films that combine the benefits of chemical bonding strength with the advantages of optical transparency and electrical insulation, effectively creating a multi-functional bonding material that resolves the contradiction between mechanical strength and optical/electrical performance.
2Reliability
If a metal bonding film is oxidized after bonding to eliminate conductivity, then electrical characteristics are improved, but additional processes and parameter management are required, complicating mass production
Solution Approach 1:
The patent performs preliminary oxidation by forming the oxide thin film before bonding occurs. This eliminates the need for post-bonding oxidation processes, heat treatment steps, and associated parameter management, while ensuring the bonding film has the desired electrical insulation properties from the outset.
Solution Approach 2:
The patent extracts the oxidation step from the post-bonding process sequence and integrates it into the film formation stage. This removes the complexity of managing oxidation parameters after bonding, while the amorphous structure ensures the oxide film maintains bonding capability.
3Strength
If conventional atomic diffusion bonding is used with metal films, then bonding is achieved, but additional oxidation and heat treatment processes are required, reducing productivity
Solution Approach 1:
The patent merges the film formation and oxidation steps into a single process by directly forming amorphous oxide thin films. This consolidation eliminates sequential oxidation and heat treatment processes, reducing total process time and improving productivity while maintaining bonding strength.
Solution Approach 2:
The patent enables continuous bonding operation by using amorphous oxide films that are ready for immediate bonding without requiring subsequent oxidation or heat treatment steps. This continuous process eliminates idle time between steps, significantly improving mass production efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables strong and stable bonding without light absorption or conductivity at the interface, expanding the application to high brightness and electronic devices by eliminating the need for additional processes and parameter management.
Implementation Method 1
the large atomic diffusion performance on the surface of the bonding film and the crystal lattice rearrangement at the contact interface
Implementation Method 2
causing chemical bonding at a bonding interface between the amorphous oxide thin films to bond the two substrates
Implementation Method 3
formed in a vacuum vessel on the bonding surface
Data Source
AI summary
The present invention achieves chemical bonding by means of a joined film made of oxides formed on a joined surface. In a vacuum container, amorphous oxide thin films are respectively formed on smooth surfaces of two substrates, and the two substrates overlap such that the amorphous oxide thin films formed on the two substrates come into contact with each other, thereby causing chemical bonding involving an atomic diffusion at a joined interface between the amorphous oxide thin films to join the two substrates.