Amorphous P-Type Oxide Semiconductor Composition and Production
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Solution Overview
Problem
Current methods fail to produce p-type oxide semiconductors with sufficient electric conductivity and controlled properties suitable for practical use, particularly due to challenges in controlling valency and crystallinity, which limits their application in devices like diodes and transistors.
Innovation Solution
A p-type oxide semiconductor composed of copper (Cu) and an element M from the p-block, such as antimony (Sb) or tin (Sn), in an amorphous state, allowing for adjustable electric conductivity by varying the Cu:M ratio, produced through a method involving a solvent, Cu-containing compound, and M-containing compound using a coating and heat treatment process at relatively low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature heat treatment (500°C or higher) is used to produce p-type oxide, then electric conductivity is improved, but manufacturing complexity and energy consumption increase
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperature (500°C or higher) to a lower temperature range (100-400°C). This is achieved by modifying the chemical composition parameters - specifically using Cu-poor and M-rich compositions with controlled oxygen content, which enables p-type oxide formation at lower temperatures while maintaining sufficient electric conductivity for practical applications
2Reliability
If crystalline structure is used to achieve p-type conductivity, then electric conductivity is improved, but manufacturing precision and phase control become difficult
Solution Approach 1:
The patent changes the structural parameter from crystalline to amorphous phase. By controlling composition parameters (Cu-poor, M-rich) and using appropriate fabrication methods, the patent achieves p-type conductivity in amorphous oxides, eliminating the need for precise crystalline phase control while maintaining sufficient electric conductivity
Solution Approach 2:
The patent creates a composite material system combining Cu, M (p-block element), and O in specific ratios. This composite approach with controlled stoichiometry enables p-type conductivity through a different mechanism than conventional crystalline materials, allowing composition control to substitute for structural order control
3Ease of manufacture
If Cu-rich composition is used to form single phase film, then film formation is easier, but p-type conductivity cannot be achieved due to Cu2+ phase mixing
Solution Approach 1:
The patent inverts the conventional composition approach from Cu-rich to Cu-poor composition. Instead of adding more Cu to improve conductivity, the patent uses Cu-deficient compositions with excess M and controlled oxygen content, which reverses the valency control mechanism to stabilize Cu+ and achieve p-type conductivity
Solution Approach 2:
The patent changes the composition parameters to Cu-poor and M-rich ratios with specific oxygen content control. This parameter inversion enables simultaneous achievement of single-phase film formation and p-type conductivity by controlling the Cu:(M+Cu) ratio and oxygen stoichiometry
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach enables the production of p-type oxide semiconductors with excellent electric conductivity and controlled properties, suitable for use in semiconductor elements like diodes and transistors, offering improved performance and stability compared to existing techniques.
Implementation Method 1
A p-type oxide semiconductor composed of copper (Cu) and an element M from the p-block, such as antimony (Sb) or tin (Sn), in an amorphous state, allowing for adjustable electric conductivity by varying the Cu:M ratio, produced through a method involving a solvent, Cu-containing compound, and M-containing compound using a coating and heat treatment process
Data Source
AI summary
To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.