Amorphous and Polysilicon TFTs for OLED Grayscale Control

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Solution Overview

Problem

The narrow driving range of gate voltage applied to the driving thin film transistor in OLED displays limits the grayscale of light emitted from the organic emission layer, resulting in deteriorated display quality.

Innovation Solution

Incorporating a combination of amorphous silicon and polysilicon channel regions in thin film transistors, with specific gate electrode configurations and capacitor designs, to expand the driving range of the gate voltage and enhance grayscale capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If polysilicon channel region is used in all thin film transistors to improve semiconductor characteristics, then driving current capability is improved, but driving range of gate voltage becomes narrow and grayscale is limited

Engineering Contradiction:
Improvesemiconductor characteristicVSAvoiddriving range of gate voltage
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent applies different channel materials to different transistor types based on their specific functional requirements. Polysilicon channel regions are used in switching transistors (second, third, fourth, fifth, sixth transistors) where high mobility is critical for fast switching. Amorphous silicon channel region is used in the driving transistor (first transistor) where voltage control range and grayscale precision are paramount. This local differentiation resolves the contradiction by optimizing each transistor's material properties for its specific role in the pixel circuit.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If amorphous silicon channel region is used in driving thin film transistor to expand gate voltage driving range, then grayscale capability is improved, but semiconductor characteristic and driving current capability deteriorate

Engineering Contradiction:
Improvedriving range of gate voltageVSAvoiddriving current capability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The pixel circuit is segmented into multiple transistor functions: the first transistor (driving transistor) handles voltage control and grayscale generation using amorphous silicon for its wide voltage range, while the second through sixth transistors (switching transistors) handle current switching and signal routing using polysilicon for its high mobility. This segmentation allows each transistor type to be optimized independently, resolving the contradiction between voltage range and current capability.

Inventive Principle:
Principle #1Segmentation

3Manufacturing precision

If multiple thin film transistors with different channel materials are used, then display quality is improved, but device complexity increases

Engineering Contradiction:
Improvedisplay qualityVSAvoidtransistor configuration
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent employs a multi-functionality strategy where the first transistor serves dual purposes: it acts as the driving transistor that controls the OLED brightness and also functions as a storage element that maintains the voltage level during the display period. The capacitor (first capacitor) works in conjunction with the first transistor to maintain charge. This multi-functionality reduces the need for additional separate components, partially offsetting the complexity introduced by using different channel materials.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS8987719B2Organic light emitting diode display
Publication Date: 2015.03.24 SAMSUNG DISPLAY CO LTD
  • US8987719B2 patent drawing
  • US8987719B2 patent drawing
  • US8987719B2 patent drawing

AI summary

An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting element formed on the substrate; a first thin film transistor connected to the organic light emitting element and including an amorphous silicon channel region; and at least one other thin film transistor connected to the first thin film transistor and including a polysilicon channel region.