Amorphous Sc-Doped Al2O3 UV Target for Vacuum Ultraviolet Emission
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional Sc:Al2O3 ultraviolet light sources have a limited emission wavelength range, failing to emit significant light in the vacuum ultraviolet region around 200 nm, restricting their application.
Innovation Solution
An ultraviolet light-generating target with an amorphous light-emitting layer of Sc-doped Al2O3, formed by vapor-depositing on a substrate and firing, which allows for wider wavelength emission, including the vacuum ultraviolet region, by maintaining a doping concentration of Sc at 4.0 atomic % or less and a thickness of 2.0 μm or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional Sc:Al2O3 with crystalline structure is used, then good CL intensity is obtained, but the emission wavelength range is limited and cannot emit significantly at 200 nm
Solution Approach 1:
The patent changes the crystal structure parameter from crystalline to amorphous state in Sc:Al2O3. This parameter change enables the material to emit ultraviolet light across a broader wavelength range including 200 nm, while maintaining sufficient emission intensity through controlled Sc doping concentration (4.0 atomic % or less) and thin layer formation (2.0 μm or less).
Solution Approach 2:
The patent creates a composite structure combining amorphous Sc-doped Al2O3 layer with a substrate transmitting ultraviolet light. This composite approach allows the light-emitting layer to achieve wide wavelength emission while the substrate provides mechanical support and UV transmission, resolving the contradiction between intensity and wavelength range.
2Adaptability or versatility
If the light-emitting layer is made thin (2.0 μm or less), then wide wavelength range emission including vacuum UV is achieved, but the layer becomes more difficult to manufacture with uniform properties
Solution Approach 1:
The patent specifies predetermined limits for layer thickness (2.0 μm or less) and Sc doping concentration (4.0 atomic % or less) as design parameters before manufacturing. These preliminary specifications guide the vapor deposition process to achieve the desired amorphous structure and emission properties, ensuring consistent performance across production batches.
3Adaptability or versatility
If Sc doping concentration is reduced (4.0 atomic % or less), then wide wavelength range emission is achieved, but the emission intensity may decrease
Solution Approach 1:
The patent optimizes the Sc doping concentration parameter to 4.0 atomic % or less, which balances two competing requirements: lower doping enables wider wavelength range emission including vacuum UV, while maintaining sufficient emission intensity through the synergistic effect of optimized thickness (2.0 μm or less) and amorphous structure formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the generation of ultraviolet light over a wide wavelength range, including the deep and vacuum ultraviolet regions, enhancing the emission intensity and range compared to conventional Sc:Al2O3 sources.
Implementation Method 1
a light-emitting layer provided on the substrate and emitting ultraviolet light in response to an electron beam
Implementation Method 2
vapor-depositing Al2O3 doped with Sc on a substrate transmitting ultraviolet light, to form an amorphous layer
Data Source
AI summary
An ultraviolet light-generating target comprising a substrate transmitting ultraviolet light; and a light-emitting layer provided on the substrate and emitting ultraviolet light in response to an electron beam, wherein the light-emitting layer is an amorphous layer formed of Al2O3 doped with Sc.