Amorphous Semiconductor Bonding Interlayer for Leak Current Prevention
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Solution Overview
Problem
In three-dimensional integration of semiconductor devices, existing bonding methods at room temperature face challenges in simultaneously bonding conductive and insulating materials without generating leak currents between conductive materials, which affects the operational stability of the device.
Innovation Solution
A semiconductor device configuration that includes a bonding interlayer between the substrates, formed from amorphous semiconductor material, which exhibits non-conductivity independently and conductivity when bonded to conductive materials, allowing for the simultaneous bonding of conductive and insulating materials while preventing leak currents, and is formed using techniques like vapor deposition or sputtering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If metal is attached onto the bonded surface to enable simultaneous bonding of conductive and insulating materials, then bonding capability is improved, but leak current is generated between adjacent conductive materials
Solution Approach 1:
An amorphous semiconductor layer is introduced as an intermediary between the metal conductive materials and the insulating materials. This intermediate layer enables the metal to bond with both conductive and insulating materials while the amorphous semiconductor itself provides electrical insulation, preventing leak current between adjacent conductive materials.
Solution Approach 2:
The bonded surface structure becomes a composite system consisting of metal conductive materials, amorphous semiconductor material, and insulating materials. This composite structure combines the bonding capability of metal with the electrical insulation properties of amorphous semiconductor, achieving both simultaneous bonding and leak current prevention.
2Manufacturing precision
If room temperature bonding is used to suppress substrate deformation and improve alignment accuracy, then manufacturing precision is improved, but insulating materials cannot be directly bonded
Solution Approach 1:
The amorphous semiconductor layer serves as a mediator that enables insulating materials to be bonded at room temperature. Without this intermediate layer, insulating materials cannot be directly bonded. The amorphous semiconductor facilitates the bonding process while maintaining the advantages of room temperature bonding including suppressed substrate deformation and improved alignment accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively bonds conductive and insulating materials together, ensuring non-conductivity between insulating materials and conductivity between conductive materials, preventing leak currents and achieving stable operation of the semiconductor device with improved bonding strength and electric properties.
Implementation Method 1
it is possible to simply form the bonding interlayer having properties in which the non-conductivity is independently exhibited and the conductivity is exhibited by being bonded to the conductive material, on the bonded surface of the substrate by performing vapor deposition, sputtering, or chemical vapor deposition with respect to the semiconductor material
Implementation Method 2
it is possible to simply form the bonding interlayer having properties in which the non-conductivity is independently exhibited and the conductivity is exhibited by being bonded to the conductive material, on the bonded surface of the substrate by performing vapor deposition, sputtering, or chemical vapor deposition with respect to the semiconductor material
Implementation Method 3
it is possible to simply form the bonding interlayer having properties in which the non-conductivity is independently exhibited and the conductivity is exhibited by being bonded to the conductive material, on the bonded surface of the substrate by performing vapor deposition, sputtering, or chemical vapor deposition with respect to the semiconductor material
Data Source
Figure 1
Figure 2~3
Figure 4
AI summary
Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes 23 and 26 and insulating layers 22 and 25 are respectively exposed to front surfaces 17A and 18A, including a bonding interlayer 30 which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes 23 and 26, between the front surfaces 17A and 18A.