Amorphous Semiconductor Hydrogen Electrolyte Redox Capacitor
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Solution Overview
Problem
Redox capacitors using acid aqueous solutions as electrolytes face issues such as electrode corrosion and require high temperatures or increased humidity, making them unsuitable for room temperature operation.
Innovation Solution
Employing amorphous semiconductors including hydrogen, such as amorphous silicon or oxide semiconductors like zinc oxide, as the electrolyte, which can be deposited using methods like sputtering or CVD, allowing the redox capacitor to operate at room temperature with a simple structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If acid aqueous solution is used as electrolyte, then redox capacitor can be manufactured, but electrode corrosion occurs
Solution Approach 1:
The patent changes the fundamental parameter of electrolyte composition from acid aqueous solution to amorphous semiconductor including hydrogen. This parameter change eliminates the corrosive nature of the electrolyte while maintaining its functional properties for charge storage, thereby resolving the contradiction between ease of manufacture and electrode stability.
Solution Approach 2:
The patent employs composite material structure by incorporating hydrogen into amorphous semiconductor lattice. This composite approach creates a new material class that combines the structural properties of semiconductor with the functional properties of electrolyte, achieving both manufacturability and corrosion-free operation.
2Reliability
If cesium hydrogensulfate is used as electrolyte, then redox capacitor can operate, but high temperature (≥143°C) is required due to structural phase transition
Solution Approach 1:
The patent changes the thermal parameter by using amorphous semiconductor including hydrogen, which eliminates the structural phase transition problem inherent in cesium hydrogensulfate. This allows the redox capacitor to operate at room temperature while maintaining electrolyte functionality, resolving the contradiction between reliability and operating temperature.
3Temperature
If moisture is increased for room temperature operation, then redox capacitor can function, but device size increases
Solution Approach 1:
The patent fundamentally changes the electrolyte parameter from moisture-dependent to hydrogen-containing amorphous semiconductor. This eliminates the need for high humidity environments, allowing compact device design at room temperature without the volume penalty associated with moisture management systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the manufacture of a redox capacitor that can function at room temperature without corrosion issues, maintaining stability and increasing capacitance through enhanced hydrogen concentration and defect sites in the amorphous semiconductor structure.
Implementation Method 1
a redox capacitor that utilizes capacitance that is stored along an electron transfer process (Faraday process) on an electrode surface
Implementation Method 2
the electrolyte of the redox capacitor is formed by a sputtering method, a CVD method, a printing method, a sol-gel method, a dip coating method, or the like
Implementation Method 3
the electrolyte of the redox capacitor is formed by a sputtering method, a CVD method, a printing method, a sol-gel method, a dip coating method, or the like
Implementation Method 4
After amorphous semiconductor is deposited over a substrate or an active material, heating is performed in an atmosphere containing hydrogen to form amorphous semiconductor including hydrogen as the electrolyte
Implementation Method 5
hydrogen is added into the amorphous semiconductor by an ion doping method or an ion implantation method to form amorphous semiconductor including hydrogen as the electrolyte
Implementation Method 6
hydrogen is added into the amorphous semiconductor by an ion doping method or an ion implantation method to form amorphous semiconductor including hydrogen as the electrolyte
Data Source
AI summary
To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO3(ZnO)m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.