Amorphous Inorganic Oxide Semiconductor Layer for Thermal Stability

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Solution Overview

Problem

Conventional stacked imaging devices face instability issues due to semiconductor layer alterations during the manufacturing process and over time, particularly when heat is applied, leading to potential delays in signal charge transfer.

Innovation Solution

Incorporating a semiconductor material layer with an amorphous inorganic oxide semiconductor material, specifically with a composition of metallic atoms like Ga, Sn, and oxygen, which forms a crystalline structure with positive formation energy, ensuring stability and high carrier mobility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional semiconductor layer is used in stacked imaging devices, then the device structure can be implemented, but the semiconductor layer undergoes alterations during manufacturing and over time, leading to instability and potential signal charge transfer delays

Engineering Contradiction:

Improvestability of semiconductor layerVSAvoidcomposition stability of semiconductor layer

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent changes the material parameters of the semiconductor layer by using inorganic oxide semiconductor materials (such as In-Ga-Zn-O) with specific compositional ratios and amorphous structures. This material substitution fundamentally alters the physical and chemical properties to achieve thermal stability and prevent composition changes during manufacturing and operation, directly resolving the contradiction between reliability and compositional stability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite inorganic oxide semiconductor materials containing multiple metallic elements (In, Ga, Zn) combined with oxygen in specific proportions. This composite structure creates a material with enhanced stability characteristics that resist alteration during manufacturing processes and over time, while maintaining the necessary electrical properties for signal charge transfer

Inventive Principle:

Principle #40Composite materials

2Temperature

If heat is applied during manufacturing or usage, then processing and operation can proceed, but semiconductor layer alterations occur leading to instability

Engineering Contradiction:

Improveheat resistanceVSAvoidstability under heat

Core Design Contradiction:

TemperatureVSReliability

Solution Approach 1:

The patent selects inorganic oxide semiconductor materials with high thermal stability parameters. These materials maintain their compositional integrity and structural properties at elevated temperatures encountered during manufacturing processes and device operation, preventing the alterations that would compromise reliability under thermal stress

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent converts the potentially harmful effect of heat application during manufacturing and operation into a beneficial outcome by selecting materials that are specifically designed to be thermally stable. The heat treatment processes that would normally cause degradation in conventional semiconductors instead serve to stabilize the amorphous inorganic oxide semiconductor structure and enhance its electrical properties

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides a stable semiconductor material layer that maintains performance during manufacturing and usage, preventing semiconductor layer alterations and enhancing signal charge transfer efficiency.

Implementation Method 1

a photoelectric conversion layer (a light receiving layer) is interposed between two electrodes. The stacked imaging device then requires a structure for storing and transferring signal charges generated at the photoelectric conversion layer on the basis of photoelectric conversion.

Methodology Applied

Scientific EffectPhotoelectric conversion: Photoelectric Effect

Implementation Method 2

A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.

Methodology Applied

Scientific EffectThermal stability of amorphous structure:

Data Source

PatentUS11705530B2Imaging device, stacked imaging device, and solid-state imaging apparatus

Publication Date: 2023.07.18 SONY GROUP CORP

AI summary

An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.