Polycrystallization of Amorphous Semiconductor Film Using Ozone Water
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Solution Overview
Problem
The conventional method for polycrystallizing amorphous semiconductor films requires multiple processes, including removal of the natural oxide film and subsequent re-oxidation, which reduces production efficiency and stability of thin film transistors.
Innovation Solution
A polycrystallization method that cleans the natural oxide film using ozone water to introduce oxygen uniformly, allowing for polycrystallization to occur without completely removing the natural oxide film, thereby reducing the number of processes and improving efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the natural oxide film is completely removed with hydrofluoric acid and re-formed through oxidation, then stable polycrystalline semiconductor film can be obtained, but the number of processes increases and production efficiency decreases
Solution Approach 1:
The invention extracts and removes the natural oxide film from the amorphous semiconductor film surface using hydrofluoric acid in the pretreatment process, then selectively re-forms a controlled oxide film during laser irradiation by controlling oxygen concentration in the atmosphere, thereby eliminating the need for separate re-oxidation steps and reducing total process time
Solution Approach 2:
The invention performs preliminary oxidation of the amorphous semiconductor film surface by irradiating with a laser in an oxygen-rich atmosphere before polycrystallization, so that the oxide film is already formed and ready to provide oxygen during the subsequent polycrystallization step, eliminating the need for separate oxidation and polycrystallization steps
2Ease of manufacture
If the natural oxide film is completely removed in the pretreatment process, then polycrystallization can proceed, but additional oxidation steps are required in the crystallization process
Solution Approach 1:
The invention merges the oxidation step and polycrystallization step into a single integrated process by controlling the laser irradiation conditions and oxygen concentration in the atmosphere simultaneously, so that the oxide film formation and polycrystallization occur together during laser irradiation, reducing the total number of separate processes
Solution Approach 2:
The invention dynamically adjusts the oxygen concentration in the atmosphere during laser irradiation - starting with high oxygen concentration to form the oxide film, then reducing oxygen concentration to enable polycrystallization - allowing the process conditions to change continuously to achieve both oxidation and polycrystallization in one step
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the process by maintaining the natural oxide film, ensuring stable polycrystalline semiconductor film formation and enhancing production efficiency by eliminating the need for hydrofluoric acid treatment and additional oxidation steps.
Implementation Method 1
cleaning the natural oxide film while leaving the natural oxide film on the surface... cleaning the natural oxide film using ozone water to introduce oxygen uniformly
Implementation Method 2
the amorphous semiconductor film is irradiated with a laser in the atmosphere of oxygen at a comparatively high concentration
Implementation Method 3
the amorphous semiconductor film is polycrystallized
Data Source
AI summary
According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface. The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film, and a step of polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left.