Amorphous Silicon Thin Film Adhesion and Etch Profile Optimization
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Solution Overview
Problem
The adhesion of amorphous silicon (a-Si) layers on SiN base layers is poor, leading to insufficient etching in the lower regions and increased particle generation due to the need for additional plasma treatment processes, which decreases productivity and film quality.
Innovation Solution
A method involving the sequential deposition of a first amorphous silicon layer using a gas containing silicon and nitrogen, followed by a second amorphous silicon layer using only a silicon-containing gas, with adjustable supply flow rates to reduce the tail phenomenon and enhance etch profiles without requiring plasma treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If NH3 plasma treatment process is performed before depositing a-Si, then adhesion of a-Si layer on SiN base layer is improved, but product productivity decreases due to increase in number of process steps
Solution Approach 1:
The invention extracts and eliminates the separate NH3 plasma treatment process step from the conventional manufacturing flow. Instead of performing plasma treatment as a distinct pre-step, the method incorporates nitrogen-containing gas supply directly into the a-Si deposition process itself, thereby removing the unnecessary process step while maintaining adhesion improvement benefits
Solution Approach 2:
The invention merges the adhesion improvement function (previously achieved by separate NH3 plasma treatment) with the a-Si deposition process. By supplying nitrogen-containing gas during deposition, the two functions are combined into a single integrated process step, improving productivity without sacrificing adhesion quality
2Strength
If NH3 plasma treatment process is performed before depositing a-Si, then adhesion of a-Si layer on SiN base layer is improved, but particle generation on a-Si thin film increases due to frequent power on/off
Solution Approach 1:
The invention ensures continuous operation of the deposition process without interrupting for separate plasma treatment. By incorporating nitrogen supply into the continuous deposition flow, the method eliminates frequent power on/off cycles that cause particle generation, while maintaining continuous film formation and adhesion improvement
3Productivity
If a-Si layer is formed on SiN base layer without plasma treatment, then productivity increases, but tail phenomenon occurs in etching process where etching of lower region is insufficient
Solution Approach 1:
The invention performs preliminary nitrogen incorporation into the a-Si layer structure during the deposition process itself. This preliminary action modifies the film properties in advance, ensuring that subsequent etching processes can proceed uniformly without the tail phenomenon, while avoiding the need for separate pre-treatment steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes a-Si layer formation on SiN thin films, reduces the tail phenomenon, improves etch rates, and increases productivity by eliminating the need for plasma treatment, thereby enhancing film density and etch profiles.
Implementation Method 1
providing a first gas containing silicon and a second gas containing nitrogen on a substrate to form a first amorphous silicon layer
Implementation Method 2
providing a first gas containing silicon on the substrate having the first amorphous silicon layer formed thereon to form a second amorphous silicon layer
Data Source
AI summary
The present invention relates to a method for forming an amorphous silicon thin film, a method for manufacturing a semiconductor device including the same, and a semiconductor device manufactured thereby. The present invention discloses a method for forming an amorphous silicon thin film, wherein the method includes a first step (S10) of providing a first gas containing silicon and a second gas containing nitrogen on a substrate (100) to form a first amorphous silicon layer (310b), and a second step (S20) of providing a first gas containing silicon on the substrate (100) having the first amorphous silicon layer (310b) formed thereon to form a second amorphous silicon layer (300a).