Amorphous Silicon Contact Plug Crystallization for Semiconductor Integration
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Solution Overview
Problem
The integration of semiconductor devices is hindered by the difficulty in forming fine patterns due to the need for advanced exposure techniques, which increases fabrication costs and complexity.
Innovation Solution
A method involving the formation of an interlayer insulating structure, a contact hole, and an amorphous silicon layer, where hydrogen atoms are introduced and the layer is crystallized using the substrate as a seed, resulting in a lower contact plug with a convex top surface and an upper contact plug with poly-crystalline silicon, optimizing grain size distribution for improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If new exposure techniques are used to form fine patterns, then integration density is improved, but fabrication cost increases
Solution Approach 1:
The patent changes the material parameter of the contact plug from conventional materials to silicon-based material, and controls the crystallization process parameters (temperature, atmosphere with hydrogen atoms) to achieve fine pattern formation without requiring advanced exposure techniques, thereby reducing fabrication cost while maintaining integration density
Solution Approach 2:
The patent utilizes the phase transition of silicon from amorphous to crystalline state through controlled crystallization process. By providing hydrogen atoms and heating the amorphous silicon layer, the silicon crystallizes to form contact plugs with desired properties, enabling fine pattern formation without expensive exposure equipment
2Productivity
If new exposure techniques are used to form fine patterns, then integration density is improved, but device complexity increases
Solution Approach 1:
The patent simplifies the fabrication process by changing to silicon-based material deposition and crystallization parameters that can be controlled with existing equipment, avoiding the need for complex new exposure techniques while achieving fine pattern formation for high integration density
Solution Approach 2:
The amorphous silicon layer performs self-organization during the crystallization process, where hydrogen atoms facilitate the reorganization of silicon atoms into crystalline structures, automatically forming the desired fine patterns without requiring complex external guidance or multiple processing steps
3Reliability
If amorphous silicon layer is crystallized using substrate as seed, then contact reliability is improved, but void formation may occur
Solution Approach 1:
The patent performs crystallization in an atmosphere containing hydrogen atoms, which acts as a protective environment. The hydrogen atoms prevent harmful reactions during heating and facilitate uniform crystallization, reducing void formation while maintaining contact reliability through the substrate-seeded crystallization process
Solution Approach 2:
The patent introduces hydrogen atoms into the amorphous silicon layer before the crystallization process. These hydrogen atoms serve as a cushioning mechanism that prevents void formation during the phase transition, ensuring reliable contact formation while the substrate acts as a seed for controlled crystallization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of semiconductor devices by preventing void formation in lower contact plugs and ensuring effective contact with the substrate, thus improving integration density without the need for expensive exposure techniques.
Implementation Method 1
crystallizing the first portion using the substrate as a seed
Implementation Method 2
performing a thermal treatment process on the amorphous silicon layer
Data Source
AI summary
A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.