Amorphous Silicon Fluorine Doping With a Conductive Protective Layer
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Solution Overview
Problem
Conventional fluorine doping processes in display device manufacturing generate static electricity, leading to positive shifts in threshold voltage due to local F+ ion concentration, which affects the performance of transistors.
Innovation Solution
A method involving the formation of a conductive protective layer on amorphous silicon before fluorine doping, which prevents static electricity generation by maintaining the same potential as the silicon and removing fluorine after doping, ensuring it does not remain on the silicon surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If fluorine doping is performed directly on amorphous silicon without a protective layer, then doping efficiency is improved, but static electricity is generated causing positive shifts in threshold voltage
Solution Approach 1:
A conductive protective layer is introduced as an intermediary between the fluorine doping process and the amorphous silicon. This protective layer acts as a mediator that prevents direct charge accumulation on the silicon surface while still allowing fluorine ions to pass through and dope the underlying insulating film, thus eliminating static electricity generation without compromising doping efficiency
Solution Approach 2:
The conductive protective layer is formed on the amorphous silicon surface before the fluorine doping process begins. This preliminary action prepares the surface by establishing a conductive pathway that prevents charge accumulation during subsequent doping, thereby preventing static electricity generation before it can occur
2Object-generated harmful factors
If a conductive protective layer is formed before fluorine doping, then static electricity generation is prevented, but additional process steps are required
Solution Approach 1:
The conductive protective layer serves multiple functions simultaneously: it acts as a protective barrier during doping, provides a conductive pathway to prevent static electricity, and can be integrated with existing electrode structures in the display device. This multi-functionality reduces the need for separate dedicated components and minimizes overall process complexity
3Productivity
If fluorine remains on the silicon surface after doping, then doping efficiency is maintained, but transistor performance is degraded due to threshold voltage shift
Solution Approach 1:
The conductive protective layer serves as an intermediary that controls fluorine distribution during doping. It allows fluorine ions to pass through and dope the insulating film effectively, but prevents excess fluorine from accumulating on the silicon surface, thus maintaining doping efficiency while protecting transistor performance
Solution Approach 2:
The conductive protective layer is removed after the fluorine doping process is complete. This extraction step eliminates any remaining fluorine on the silicon surface that could cause threshold voltage shifts, while the doping of the insulating film has already been accomplished during the process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents static electricity generation during fluorine doping, minimizing defects in the insulating film and maintaining the integrity of the transistor performance by avoiding positive shifts in threshold voltage.
Implementation Method 1
forming a conductive protective layer on the amorphous silicon before doping with fluorine, which prevents static electricity generation by maintaining the same potential as the silicon
Implementation Method 2
doping with fluorine... By the fluorine doping, fluorine may be doped into an insulating layer positioned under the amorphous silicon
Implementation Method 3
Removing the conductive protective layer may be performed by wet etching
Data Source
AI summary
A method of manufacturing a display device according to an embodiment of the present invention includes forming amorphous silicon on a substrate and forming a conductive protective layer on the amorphous silicon, doping with fluorine and removing the conductive protective layer.