Amorphous Silicon Gate Resistor Hydrogen Desorption Barrier
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Solution Overview
Problem
The use of amorphous silicon containing hydrogen additives as gate resistors in MOS power semiconductor devices experiences hydrogen desorption at high temperatures, leading to variations in temperature characteristics and resistance values, which deteriorates the reliability of the gate resistor.
Innovation Solution
A semiconductor device configuration incorporating a hydrogen-doped amorphous silicon resistance layer with a silicon nitride or aluminum nitride layer covering it, which reduces hydrogen desorption and maintains stable resistance values even at high temperatures, enhancing the reliability of the gate resistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If amorphous silicon containing hydrogen additives is used as gate resistor, then negative temperature characteristics are achieved, but hydrogen desorption occurs at high temperatures causing resistance value variation
Solution Approach 1:
The patent uses a composite structure combining amorphous silicon layer (providing negative temperature coefficient) with microcrystalline silicon layer (providing hydrogen barrier and structural stability). This composite material approach allows the gate resistor to maintain negative temperature characteristics while preventing hydrogen desorption at high temperatures, thus resolving the contradiction between temperature adaptability and reliability.
Solution Approach 2:
The patent applies different crystallinity qualities to different layers: the lower amorphous silicon layer provides the desired negative temperature coefficient, while the upper microcrystalline silicon layer provides hydrogen barrier functionality. This local differentiation of material quality allows each layer to perform its specific function, solving the contradiction between achieving negative temperature characteristics and preventing hydrogen desorption.
2Loss of energy
If hydrogen-doped amorphous silicon is used for gate resistor, then power loss reduction is achieved, but desorption of hydrogen during high-temperature operation causes deterioration in reliability
Solution Approach 1:
The composite structure of amorphous silicon and microcrystalline silicon layers allows the gate resistor to maintain low power loss through negative temperature coefficient while the microcrystalline silicon layer prevents hydrogen desorption at high temperatures, thus resolving the contradiction between energy efficiency and reliability.
Solution Approach 2:
The microcrystalline silicon layer acts as an intermediary barrier that prevents hydrogen from escaping the amorphous silicon layer during high-temperature operation. This intermediary layer maintains the integrity of the hydrogen-doped amorphous silicon while preventing harmful hydrogen desorption, thus preserving both power loss reduction and reliability.
3Temperature
If amorphous silicon with negative temperature coefficient is used, then temperature characteristics are controlled, but variation in temperature characteristics occurs at high temperatures
Solution Approach 1:
The patent combines amorphous silicon (providing negative temperature coefficient) with microcrystalline silicon (providing structural stability and hydrogen barrier). This composite material structure maintains stable temperature characteristics at high temperatures by preventing hydrogen desorption, thus resolving the contradiction between achieving controlled temperature characteristics and maintaining their stability.
Solution Approach 2:
The patent applies different crystalline qualities to different layers: amorphous silicon in the lower layer provides temperature coefficient control, while microcrystalline silicon in the upper layer provides compositional stability. This local quality differentiation ensures that temperature characteristics remain stable at high temperatures while maintaining the desired negative temperature coefficient.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively reduces resistance value variations and improves the long-term reliability of the gate resistor by minimizing hydrogen desorption, thereby enhancing the performance and durability of the semiconductor device under high-temperature conditions.
Implementation Method 1
use of amorphous silicon containing additives of hydrogen as impurities as a gate resistor having negative temperature characteristics may cause desorption of hydrogen from amorphous silicon during high-temperature operation
Data Source
AI summary
Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.