Amorphous Silicon Etching with Hydrogen Chloride Gas
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in improving the quality and productivity of silicon films formed on substrates, particularly in maintaining the amorphous state of silicon films during etching, which affects etching rates and surface roughness.
Innovation Solution
A method involving the formation of a first amorphous silicon film on a substrate, followed by etching using hydrogen chloride gas at a temperature that maintains the amorphous state, and subsequent film formation steps, all conducted within a controlled substrate processing apparatus to enhance etching efficiency and film uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate temperature is lowered to maintain the amorphous state during etching, then the etching rate and surface smoothness are improved, but the productivity decreases due to additional temperature adjustment steps
Solution Approach 1:
The patent changes the substrate temperature parameter from a high temperature (used during film formation) to a low temperature (used during etching) to maintain the amorphous state of the silicon film. This parameter change enables improved etching rate and surface smoothness while the patent addresses the productivity concern by optimizing the temperature adjustment process and timing.
Solution Approach 2:
The patent implements dynamic temperature control by adjusting the substrate temperature between different process steps (film formation and etching). The temperature is dynamically changed from a first temperature during film formation to a second, lower temperature during etching, allowing the process to adapt to different requirements of each step while maintaining overall productivity.
2Manufacturing precision
If the substrate temperature is lowered to maintain the amorphous state during etching, then the etching rate is improved, but the processing complexity increases due to temperature adjustments
Solution Approach 1:
The patent utilizes parameter changes by adjusting the substrate temperature to optimize the etching rate. The temperature is lowered from the film formation temperature to a second temperature that maintains the amorphous state during etching, thereby improving etching performance while managing processing complexity through controlled parameter adjustment.
Solution Approach 2:
The patent maintains continuous useful action by seamlessly transitioning between film formation and etching processes with minimal interruption. The temperature adjustment is integrated into the process flow, allowing the system to maintain productive operation throughout the sequence of steps without significant downtime or complexity increase.
3Manufacturing precision
If the substrate temperature is lowered to maintain the amorphous state during etching, then the surface smoothness is improved, but the processing time increases
Solution Approach 1:
The patent applies parameter changes by adjusting the substrate temperature to a lower second temperature during etching to maintain the amorphous state and improve surface smoothness. The processing time increase is managed by optimizing the duration of temperature adjustment and etching steps, ensuring that the overall time penalty is minimized while achieving the desired surface quality.
Solution Approach 2:
The patent performs preliminary action by preparing the substrate and controlling the temperature transition before the etching process begins. The temperature is adjusted to the appropriate level in advance, and the amorphous state is maintained throughout the etching step, thereby reducing unnecessary delays and optimizing the overall processing time while achieving improved surface smoothness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the etching rate and surface smoothness of silicon films, maintains high in-plane film thickness uniformity, and simplifies the processing sequence by eliminating the need for temperature adjustments between film formation and etching steps, thereby increasing productivity.
Implementation Method 1
etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained
Implementation Method 2
under a temperature at which an amorphous state of the first amorphous silicon film is maintained
Data Source
AI summary
There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.