Amorphous Silicon Layer UV Curing for Bubble Defect Prevention
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Solution Overview
Problem
The formation of amorphous silicon layers by PECVD on nitrogen-containing material layers often results in bubble defects due to hydrogen atoms entering the nitrogen-containing material layer, causing an uneven surface and affecting the yield of the process.
Innovation Solution
A method involving the formation of a thin amorphous silicon layer on a nitrogen-containing material layer followed by an ultraviolet (UV) curing process to remove hydrogen atoms, preventing their release during subsequent deposition steps and reducing surface defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If PECVD is used to deposit amorphous silicon layer on nitrogen-containing material layer, then amorphous silicon layer can be formed, but hydrogen atoms enter the nitrogen-containing material layer causing bubble defects and uneven surface
Solution Approach 1:
A first amorphous silicon layer is deposited on the nitrogen-containing material layer before the main amorphous silicon layer deposition. This preliminary layer serves as a barrier to prevent hydrogen atoms from the subsequent PECVD process from penetrating into the nitrogen-containing material layer, thereby eliminating the root cause of bubble defects and surface unevenness.
Solution Approach 2:
The amorphous silicon layer deposition process is divided into multiple stages: first depositing a thin barrier layer (less than 300 angstroms), then performing UV curing to remove hydrogen atoms, and finally depositing the remaining amorphous silicon layer. This segmentation allows the barrier layer to fulfill its protective function while minimizing its thickness and material consumption.
2Productivity
If PECVD deposition is performed continuously, then production efficiency is maintained, but hydrogen atoms continuously release from nitrogen-containing material layer causing ongoing bubble defects
Solution Approach 1:
The first amorphous silicon layer is deposited and UV cured before the main deposition process begins. This preliminary action creates a permanent barrier that prevents hydrogen atoms from reaching the nitrogen-containing material layer during continuous PECVD deposition, allowing high productivity without compromising layer quality.
Solution Approach 2:
The first amorphous silicon layer acts as an intermediary barrier between the PECVD plasma (source of hydrogen atoms) and the nitrogen-containing material layer. UV curing transforms this intermediary layer into an effective shield that blocks hydrogen penetration, enabling continuous deposition without bubble defects.
3Object-generated harmful factors
If a thicker barrier layer is used to prevent hydrogen penetration, then bubble defects are reduced, but material consumption and process time increase
Solution Approach 1:
UV curing changes the physical and chemical parameters of the first amorphous silicon layer, transforming it from a simple deposited layer into an activated barrier with enhanced hydrogen-blocking capability. This parameter change allows the layer to be extremely thin (less than 300 angstroms) while still providing effective protection against hydrogen penetration.
Solution Approach 2:
Instead of relying on the mechanical thickness of the barrier layer to block hydrogen atoms, the invention uses UV curing to chemically activate the layer. This substitution of mechanical barrier (thickness-based) with chemical/physical activation (UV-based) achieves superior hydrogen blocking with minimal material consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the occurrence of bubble defects, leading to a smoother surface and improved process yield in semiconductor manufacturing by isolating the nitrogen-containing material layer and preventing hydrogen interference.
Implementation Method 1
an UV curing process is performed to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer
Implementation Method 2
Amorphous silicon films are typically deposited by chemical vapor deposition (CVD), such as plasma-enhanced CVD (PECVD)
Data Source
AI summary
The present invention provides a method for forming an amorphous silicon multiple layer structure, the method comprises the flowing steps: first, a substrate material layer is provided, next, a first amorphous silicon layer is formed on the substrate material layer, wherein the first amorphous silicon layer includes a plurality of hydrogen atoms disposed therein, afterwards, an UV curing process is performed to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer, finally, a second amorphous silicon layer is formed on the first amorphous silicon layer.