Amorphous Silicon Waveguide Refractive Index Tuning

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Solution Overview

Problem

Semiconductor photonic systems face challenges due to sensitivity to fabrication variations, leading to spectral shifts and power consumption issues in real-time tuning mechanisms, which are costly and power-intensive.

Innovation Solution

The integration of amorphous silicon sections within crystalline silicon waveguides in photonic devices, using on-chip heaters and implantation of elements like Ge to adjust refractive indices through annealing, allowing for precise trimming and reducing real-time tuning power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If real-time tuning mechanisms are used to correct fabrication variations, then device performance is improved, but power consumption increases significantly

Engineering Contradiction:
Improvedevice performanceVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent applies preliminary action by performing refractive index tuning during the fabrication process itself rather than requiring continuous real-time tuning during operation. The ion implantation step modifies the refractive index of specific waveguide regions beforehand, eliminating the need for high-power real-time correction mechanisms and reducing operational power consumption while maintaining device performance

Inventive Principle:
Principle #10Preliminary action

2Productivity

If conventional trimming processes are used to correct fabrication variations, then device yield is improved, but manufacturing complexity and cost increase

Engineering Contradiction:
Improvedevice yieldVSAvoidmanufacturing process complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent employs parameter changes by utilizing ion implantation to directly modify the refractive index parameter of the waveguide material. By controlling implantation dose, energy, and location, the method achieves precise refractive index tuning during fabrication, improving device yield through systematic correction of fabrication variations without adding complex post-processing steps or mechanisms

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces mechanical or thermal trimming mechanisms with a field-based approach using ion implantation. Instead of physically modifying the waveguide structure through mechanical means or using high-power thermal tuning during operation, the method uses controlled ion bombardment during fabrication to permanently adjust optical properties, simplifying the overall manufacturing process

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces real-time tuning power by up to 85% and enables cost-effective, scalable correction of fabrication variations across a range of silicon photonic devices, enhancing yield and design flexibility.

Implementation Method 1

a heat element at a vicinity of the first section of the waveguide, wherein the heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon

Methodology Applied
Scientific EffectAnnealing: Annealing

Implementation Method 2

the amorphous silicon in the first section having been formed with silicon lattice defects caused by an element implanted into the first section

Methodology Applied
Scientific EffectIon implantation: Ion Implantation

Data Source

PatentUS11175451B2Mechanisms for refractive index tuning semiconductor photonic devices
Publication Date: 2021.11.16 INTEL CORP
  • US11175451B2 patent drawing
  • US11175451B2 patent drawing
  • US11175451B2 patent drawing

AI summary

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.