Amorphous TeOx TFT Channel for Stable P-Type Hole Transport
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Solution Overview
Problem
Current metal oxide semiconductors lack stable p-type characteristics for hole transport at room temperature, limiting their application in optoelectronics and CMOS circuits due to unstable valence band maximum and poor electrical performance.
Innovation Solution
A semiconductor comprising a chalcogen atom and a tellurium composite, represented by TeOx, is developed using thermal evaporation or sputtering, with a p-type configuration and oxygen-deficient state to enhance hole conduction, and is integrated into a thin film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional metal oxide semiconductors (CuxO, SnO) are used as p-type materials, then hole transport at room temperature is achieved, but electrical performance deteriorates with low hole field-effect mobility and low on/off current ratio
Solution Approach 1:
The patent changes the chemical composition parameters by using TeOx with x<2 (oxygen-deficient state) instead of conventional CuxO or SnO materials. This parameter change creates a new material system with superior hole transport properties while maintaining p-type characteristics at room temperature, achieving both reliability and high mobility.
Solution Approach 2:
The patent employs composite material strategy by combining TeOx with specific metal elements to create a composite semiconductor material. This composite structure enables simultaneous achievement of high hole field-effect mobility and high on/off current ratio, overcoming the limitations of conventional p-type metal oxide semiconductors.
2Reliability
If metastable cation valence states (Cu+, Sn2+) are used in metal oxide semiconductors, then p-type characteristics are achieved, but ambient stability deteriorates due to instability under air conditions
Solution Approach 1:
The patent adopts TeOx with oxygen-deficient state (x<2) which forms a more stable and persistent p-type semiconductor structure compared to metastable Cu+ or Sn2+ states. This material maintains its p-type characteristics and hole transport capability without degrading in ambient air conditions, effectively replacing the unstable conventional materials.
3Reliability
If valence band maximum consists of highly localized oxygen 2p orbitals, then hole transport is possible, but electrical performance deteriorates due to anisotropic and small valence band maximum
Solution Approach 1:
The patent changes the electronic structure parameters by selecting TeOx with specific oxygen content (x<2), which modifies the valence band composition. This parameter change results in a valence band maximum with improved characteristics that enables both hole transport and high electrical performance, overcoming the limitations of conventional metal oxides.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The TeOx-based thin film transistor exhibits high hole field-effect mobility and a high on/off current ratio, enabling stable and high-performance p-channel transistors suitable for large-area flexible applications.
Implementation Method 1
a new amorphous p-type semiconductor of TeOx using a deposition technique such as thermal evaporation or sputtering
Implementation Method 2
a new amorphous p-type semiconductor of TeOx using a deposition technique such as thermal evaporation or sputtering
Data Source
AI summary
Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output/transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on/off current ratio of ˜107.