High-Frequency Amplifier Module Phase Alignment
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Solution Overview
Problem
High-frequency amplifiers using multiple devices face decreased output levels due to phase mismatches between output signals from individual amplifying devices, limiting their amplifying characteristics.
Innovation Solution
A high-frequency amplifier module with a semiconductor substrate and insulating substrate configuration, where inductor electrodes are used to adjust the phase of output signals from multiple high-frequency amplifying transistors, improving combination efficiency and amplifying characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple high-frequency amplifying devices are used to amplify one high frequency signal, then the output level can be increased, but the phase mismatch between output signals decreases the output level of the high-frequency amplifier
Solution Approach 1:
The patent applies local quality by providing individual inductor electrodes for each amplifying device's emitter electrode, with each inductor electrode having a specifically determined length. This allows each device to have customized phase adjustment capability, ensuring that local phase characteristics match the required output phase relationship, thereby resolving the phase mismatch problem while maintaining high output level
Solution Approach 2:
The patent changes the inductance parameter by varying the length of inductor electrodes connected to different amplifying devices. By adjusting the inductance values (through length variation) of the inductor electrodes, the phase of output signals from each device is individually controlled, achieving phase alignment while preserving the power amplification benefit of using multiple devices
Data Source
AI summary
A semiconductor substrate includes emitter electrodes for multiple high-frequency amplifying transistors. An insulating substrate includes multiple land electrodes, ground electrodes, and multiple inductor electrodes. The land electrodes are formed on the front surface or near the front surface of the insulating substrate, and are joined to the respective emitter electrodes. The ground electrodes are formed inside the insulating substrate. Each of the inductor electrodes couples a corresponding one of the land electrodes to any of the ground electrodes in such a manner that the lengths of the coupling to the ground electrodes are individually determined.