Analog Memory Cell Programming With Non-Integer Bits Per Cell
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Solution Overview
Problem
Existing data storage methods in analog memory cells are constrained by the need for integer power of two programming levels, limiting storage density and efficiency, and often collide with conventional operating conventions such as standard page size and interference reduction techniques.
Innovation Solution
The method involves storing data in analog memory cells using a non-integer number of bits per cell by jointly defining programming levels across multiple word lines, allowing for increased storage density while maintaining standard page size and reducing interference through alternating programming orders and two-phase storage processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If integer power of two programming levels are used, then conventional operating conventions are maintained, but storage density is limited
Solution Approach 1:
The patent changes the parameter of programming levels from restricted integer powers of two to any positive integer number of levels. This allows the memory system to achieve higher storage density by using non-standard numbers of programming levels (e.g., 3, 5, 6 levels) that better match the physical characteristics of the memory cells and maximize capacity utilization.
2Quantity of substance
If non-integer number of bits per cell is used, then storage density is enhanced, but conventional operating conventions are violated
Solution Approach 1:
The patent introduces a dynamic programming approach where the number of programming levels is determined flexibly based on the actual data storage requirements and memory cell characteristics. The system can adaptively select the optimal number of levels (not fixed to powers of two) to maximize storage density while maintaining operational feasibility through automated level determination algorithms.
3Quantity of substance
If multiple word lines are jointly programmed, then storage density is increased, but interference between word lines increases
Solution Approach 1:
The patent applies preliminary actions by determining the optimal programming levels for multiple word lines before actually programming the memory cells. The system calculates and establishes the correct number of programming levels in advance, allowing for coordinated programming that maximizes storage density while minimizing interference through pre-computed level assignments.
Solution Approach 2:
The system incorporates feedback mechanisms to monitor and adjust programming levels based on actual memory cell responses. By measuring the physical state of memory cells after programming and using this feedback information, the system can refine its level determination to achieve optimal density while controlling interference effects.
Data Source
AI summary
A method for data storage includes accepting data for storage in an array of memory cells, which are arranged in rows associated with respective word lines. Data is stored in one or more memory cells of the array using one or more programming levels. In response to a determination that a first memory cell of the one or more memory cells is subject to distortion, a second memory cell may be programmed to a predetermined programming level.