Precision Programming Circuit for Analog Neural Memory Weights

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing artificial neural networks face challenges in accurately programming non-volatile memory cells in analog neural memories due to the need for precise and specific charge storage on floating gates, which is difficult to achieve with existing CMOS-implemented synapses.

Innovation Solution

The use of non-volatile memory arrays with CMOS technology allows for individual and precise programming of memory cells, enabling continuous and minimal disturbance changes in charge levels, facilitating precise tuning of synapse weights in neural networks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If non-volatile memory cells are used to store synapse weights in analog neural memory, then energy consumption is reduced and precision is improved, but the difficulty of programming individual cells to precise charge levels increases

Engineering Contradiction:
Improveprecision of synapse weight storageVSAvoidease of programming memory cells
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The programming process is divided into multiple discrete steps, each applying a specific voltage level to achieve incremental charge changes. The programming voltage is segmented into different levels (e.g., Vprog1, Vprog2, Vprog3) that can be applied in sequence to precisely control the charge on the floating gate, enabling fine-grained adjustment of synapse weights.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Before final programming, reference memory cells are pre-programmed to specific charge levels that correspond to desired synapse weight values. These reference cells serve as templates that guide the programming of actual synapse memory cells, ensuring accurate charge storage without requiring complex real-time control during programming.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 3:

The programming process incorporates verification steps where the charge level on the floating gate is measured and compared against target values. Based on this feedback, additional programming pulses are applied if necessary to achieve the precise charge level required for accurate synapse weight representation.

Inventive Principle:
Principle #23Feedback

2Adaptability or versatility

If digital supercomputers or GPU clusters are used to achieve high computational parallelism, then connectivity between neurons is improved, but energy efficiency deteriorates

Engineering Contradiction:
Improveconnectivity between neuronsVSAvoidenergy efficiency
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The patent replaces digital computational mechanics with analog electrical mechanics. Instead of using digital circuits to perform multiplication and addition operations, the system uses analog memory cells where conductance values directly represent synapse weights. Current flowing through these cells naturally performs weighted summation, eliminating the need for separate computational logic circuits and significantly reducing energy consumption while maintaining high connectivity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent merges the functions of synaptic weight storage and synaptic computation into a single integrated structure. The non-volatile memory cells simultaneously store synapse weights (in the form of charge on floating gates) and perform computational operations (through conductance-based current modulation), eliminating the need for separate memory and computation units and improving energy efficiency.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentEP4401080B1Precision programming circuit for analog neural memory in deep learning artificial neural network
Publication Date: 2025.12.03 SILICON STORAGE TECHNOLOGY INC
  • EP4401080B1 patent drawingFigure 1
  • EP4401080B1 patent drawingFigure 2
  • EP4401080B1 patent drawingFigure 3

AI summary

Various embodiments of high voltage generation circuits, high voltage operational amplifiers, adaptive high voltage supplies, adjustable high voltage incrementor, adjustable reference supplies, and reference circuits are disclosed. These circuits optionally can be used for programming a non-volatile memory cell in an analog neural memory to store one of many possible values.