Analog Resistive RAM Random Number Generator Using Writing Pulse Count
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing true random number generators (TRNGs) based on resistive random access memory face challenges with high speed and reliability, particularly in generating high-speed random numbers with sufficient erasable times due to limitations in read noise characteristics and switching characteristics.
Innovation Solution
A method involving performing writing operations on analog resistive random access memory, where each operation applies pulses to change conductance values, and generating random numbers based on the pulse numbers from these operations, utilizing a writing circuit, counter, and output circuit to produce high-speed and reliable random numbers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If existing TRNGs based on read noise characteristics are used, then random number generation is possible, but the throughput is limited and erasable times are insufficient
Solution Approach 1:
The patent inverts the conventional TRNG approach by using writing operations instead of reading operations. Specifically, it applies multiple writing pulses to analog resistive RAM to change conductance values, and uses the number of pulses required to achieve a target conductance change as the random number source. This inversion enables both high throughput (1 Mbit/sec) and high erasable times (10^11), resolving the contradiction between productivity and reliability.
Solution Approach 2:
The patent changes the operational parameter from reading noise characteristics to writing pulse count characteristics. By measuring the number of writing pulses needed to achieve a specific conductance change in analog resistive RAM, the system generates random numbers with both high speed and high reliability, as the writing operation can be repeated 10^11 times while maintaining 1 Mbit/sec throughput.
2Speed
If PRNG is used to generate random numbers, then the generation speed is limited, but the system complexity is low
Solution Approach 1:
The patent replaces the algorithmic mechanical system of PRNG with a physical system based on analog resistive RAM writing characteristics. By substituting the computational approach with a physical measurement approach (counting writing pulses), the system achieves higher generation speed (1 Mbit/sec) while maintaining relatively simple device structure, thus resolving the contradiction between speed and complexity.
3Reliability
If TRNG based on switching characteristics is used, then randomness can be achieved, but the erasable times are limited
Solution Approach 1:
The patent applies preliminary action by first setting a target conductance change value before performing the writing operation. Multiple writing pulses are applied in advance to achieve this target, and the count of these preliminary pulses forms the random number. This approach ensures high randomness quality while enabling 10^11 erasable times, as the analog resistive RAM can undergo repeated writing cycles without degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method achieves a throughput of 1 Mbit/sec and erasable times of 10^11, addressing the speed and reliability issues of existing TRNGs based on resistive random access memory.
Implementation Method 1
performing n writing operations on at least one analog resistive random access memory, where each of the n writing operations comprises applying at least one writing operation pulse to change a conductance value of an operated analog resistive access memory
Data Source
AI summary
A method for generating a random number and a random number generator are provided. The method for generating a random number includes: performing n writing operations on at least one analog resistive random access memory, where each of the n writing operations includes applying at least one writing operation pulse to change a conductance value of an operated analog resistive access memory; and generating the random number based on n writing operation pulse numbers respectively corresponding to the n writing operations, where n is a positive integer. The method for generating a random number generates random numbers based on the analog characteristics of the analog resistive random access memory, the generated random number does not need back-end correction, and have both high speed and high reliability.