Analytical Ion Implantation Distribution Model for Large Tilt Angles
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Solution Overview
Problem
Current methods for simulating ion implantation distributions in MOS structures, especially at large tilt angles, rely on numerical analysis, making it difficult to obtain analytical models for pocket ion implantation distributions, which complicates the association of actual distributions with process conditions and requires expertise and significant time, limiting the use of simulators as intuitive and efficient tools for developers.
Innovation Solution
A method for generating ion implantation distributions using a computer-based analytical model that accounts for different regions influenced by the gate structure, allowing for the calculation of impurity concentration distributions at large tilt angles and providing an intuitive simulator for developers to easily operate and obtain accurate results.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If numerical analysis is used to simulate ion implantation distributions at large tilt angles, then accuracy of the distribution calculation is improved, but device complexity and difficulty of operation increase, requiring extensive expertise and time
Solution Approach 1:
The ion implantation distribution is segmented into multiple Gaussian distributions, each representing a specific region (e.g., channel region, pocket region, source/drain region). By dividing the complex distribution into simpler components, the patent achieves accurate representation of large tilt angle implantation while enabling easier calculation through superposition of individual Gaussian profiles.
Solution Approach 2:
The patent transforms the complex numerical analysis problem into a parameter-based analytical solution by expressing the ion implantation distribution as a sum of Gaussian functions with adjustable parameters (mean, standard deviation, amplitude). This parameterization allows accurate fitting to numerical results while simplifying the computational approach and reducing the need for extensive expertise.
2Productivity
If analytical models are used for ion implantation distribution, then ease of operation and speed are improved, but accuracy in matching numerical calculations deteriorates, especially at large tilt angles
Solution Approach 1:
The patent optimizes the parameters of Gaussian distributions (mean position, standard deviation, and amplitude) to match the ion implantation distribution obtained from numerical analysis. By adjusting these parameters, the analytical model achieves high accuracy in reproducing numerical results while maintaining computational efficiency and ease of operation.
Solution Approach 2:
The patent creates a composite analytical model by superimposing multiple Gaussian distributions to represent the complex ion implantation profile. This composite approach combines the simplicity of individual Gaussian functions with the accuracy needed to match numerical calculations, achieving both speed and precision.
3Manufacturing precision
If complicated diffusion phenomena are considered in device simulation, then manufacturing precision of device structure is improved, but loss of time and complexity increase
Solution Approach 1:
The patent extracts and focuses only on the essential ion implantation distribution characteristics by representing them as Gaussian profiles, separating the critical implantation physics from less important diffusion effects. This extraction allows accurate prediction of the implanted ion distribution without requiring time-consuming simulation of complicated diffusion phenomena.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the generation of analytical models for ion implantation distributions that closely match numerical calculations, facilitating device simulation and improving the association of simulation results with actual process conditions, thus simplifying the simulation process and reducing the need for extensive expertise and time.
Implementation Method 1
In silicon integrated circuit devices, to introduce impurities into a silicon substrate, ion implantation is generally performed.
Data Source
AI summary
A method of generating an ion implantation distribution by a computer is disclosed. The method includes calculating ion implantation distribution regions in a case of generating the ion implantation distribution with a large tilt angle and generating an analytical model of the ion implantation distribution in correspondence with each of the ion implantation distribution regions by using a Gauss distribution model, in which the ion implantation distribution regions have different influence on a channel region depending on a gate structure formed on the ion distribution regions.