Anchored Cut Metal Gate Plug for Leakage Isolation
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Solution Overview
Problem
As semiconductor devices continue to shrink in feature size, challenges arise in integrating more components into a given area, including issues with leakage current and V-trigger performance, which are not adequately addressed by existing technologies.
Innovation Solution
The process of forming an anchored cut metal gate (CMG) plug within a cut metal gate process, which involves forming trenches, recessing dielectric material, and etching through metal gate stacks to create a plug that separates device regions, reducing leakage current and enhancing V-trigger performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If continuous metal gate stacks are formed over semiconductor fins, then device integration density is improved, but leakage current increases at interfaces between device regions
Solution Approach 1:
The continuous metal gate stack is segmented into separate gate electrodes by forming a cut metal gate plug that extends through the metal gate stack and into the semiconductor substrate. This segmentation electrically isolates adjacent device regions (e.g., n-type and p-type devices), preventing leakage current while maintaining high integration density through the use of multiple fins and close spacing.
2Productivity
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but V-trigger performance deteriorates
Solution Approach 1:
By segmenting the metal gate stack with cut metal gate plugs, the patent enables proper electrical isolation between device regions, which is critical for maintaining V-trigger performance in high-density integrations. The segmentation allows each device to operate independently with correct threshold voltages despite reduced feature sizes.
Solution Approach 2:
The cut metal gate plug is strategically positioned at specific locations where device regions interface (e.g., between n-type and p-type devices), providing localized electrical isolation exactly where needed. This local quality approach maintains V-trigger performance at critical interfaces while preserving high integration density overall.
Data Source
AI summary
An anchored cut-metal gate (CMG) plug, a semiconductor device including the anchored CMG plug and methods of forming the semiconductor device are disclosed herein. The method includes performing a series of etching processes to form a trench through a metal gate electrode, through an isolation region, and into a semiconductor substrate. The trench cuts-through and separates the metal gate electrode into a first metal gate and a second metal gate and forms a recess in the semiconductor substrate. Once the trench has been formed, a dielectric plug material is deposited into the trench to form a CMG plug that is anchored within the recess of the semiconductor substrate and separates the first and second metal gates. As such, the anchored CMG plug provides high levels of resistance to reduce leakage current within the semiconductor device during operation and allowing for improved V-trigger performance of the semiconductor device.