Angled Backside Power Contact Layout for Dense IC Power Delivery
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing integrated circuit devices face challenges in increasing integration density and simplifying the middle-of-line (MOL) and back-end-of-line (BEOL) portions of device fabrication, particularly in forming effective backside power distribution networks (BSPDN) without increasing complexity.
Innovation Solution
The integration of a backside power rail and power contact structure, where the power contact is formed within a backside insulator and electrically connects the source/drain region to the backside power rail, with a design that includes a power plug and a backside power rail spaced apart, and a power contact that is angled relative to the source/drain region, allowing for efficient power distribution without high aspect ratio contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional power distribution structures are used, then power delivery is achieved, but integration density increases and fabrication complexity increases
Solution Approach 1:
The patent inverts the traditional power distribution approach by placing the power rail on the backside of the substrate rather than on the front side. This inversion allows power delivery without interfering with the active circuit elements on the front side, thereby increasing integration density while avoiding increased fabrication complexity. The backside power rail is formed using standard semiconductor processing techniques applied to the substrate backside.
Solution Approach 2:
The patent moves the power distribution network from the two-dimensional plane of the front side to the third dimension by utilizing the backside of the substrate. This dimensional transition allows the power rail to coexist with the active circuits without spatial conflict, enabling higher integration density. The angled power contact provides a three-dimensional connection path between the backside power rail and the front side source/drain region.
2Reliability
If high aspect ratio power contacts are used to connect source/drain to backside power rail, then electrical connection is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the geometric parameters of the power contact by using an angled orientation rather than a vertical high aspect ratio structure. The angled power contact reduces the aspect ratio while maintaining electrical connectivity between the source/drain region and the backside power rail. This parameter change simplifies the manufacturing process by reducing the difficulty of forming and filling the contact opening.
Solution Approach 2:
The angled power contact acts as an intermediary structure that bridges the gap between the backside power rail and the front side source/drain region. By introducing this angled connection path through the substrate, the patent achieves reliable electrical connection without requiring high aspect ratio vertical contacts, thereby simplifying manufacturing.
3Use of energy by moving object
If power rail is placed close to source/drain region, then power distribution efficiency is improved, but substrate interference and device performance degradation occur
Solution Approach 1:
By inverting the power rail placement to the backside of the substrate, the patent achieves close proximity to the source/drain region for efficient power distribution while physically separating the power rail from the active circuit elements. This inversion eliminates substrate interference and device performance degradation that would result from placing the power rail too close on the front side.
Data Source
Figure 1
Figure 2
Figure 3
AI summary
Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor comprising a source/drain region on a substrate; a backside power rail spaced apart from the source/drain region; and a power contact that is between the source/drain region and the backside power rail and electrically connects the source/drain region to the backside power rail. The substrate may be between the source/drain region and the backside power rail, and a centerline in a width direction of the source/drain region is angled with respect to a centerline in a width direction of the power contact.