Angled Extraction Plate Channels for Reactive Neutral Beam Control
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Solution Overview
Problem
The challenge in advanced semiconductor fabrication is the inability to precisely control the angle and angular distribution of reactive neutral species, which affects the etching process, leading to incomplete patterning and high contact resistance due to the limitations in EUVL tools and the lack of control over reactive neutrals using electrical fields.
Innovation Solution
An extraction plate with a plurality of channels oriented at a non-zero angle relative to the workpiece surface, allowing for the precise delivery of reactive neutral species, such as oxygen radicals, to achieve the desired angle and angular distribution, using specially shaped channels that reflect species outside a specified angle range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If reactive neutral species are generated in a plasma for etching, then the etching process can proceed, but the angle and angular distribution of the reactive neutrals cannot be controlled
Solution Approach 1:
The extraction plate is segmented into multiple channels, each channel independently controlling the angular distribution of reactive neutrals. By dividing the extraction plate into discrete channels with specific geometries, the system achieves precise angular control without requiring complex external control mechanisms for the entire plasma source.
Solution Approach 2:
The patent introduces an intermediary component (the extraction plate with channels) between the plasma source and the workpiece. This intermediary structure shapes and directs the reactive neutral species, providing angular control without directly modifying the plasma generation process or requiring complex control systems.
2Manufacturing precision
If EUVL double patterning is used to correct patterning issues, then feature accuracy improves, but processing time increases significantly
Solution Approach 1:
The angled radical beam performs preliminary actions by correcting photoresist bridge defects and adjusting trench profiles before subsequent etching steps. This preliminary modification of the photoresist structure enables single-patterning to achieve results that previously required double patterning, thereby reducing processing time while maintaining accuracy.
Solution Approach 2:
The patent changes the angular parameters of the radical beam by using channels oriented at non-zero angles relative to the perpendicular. This parameter change in beam angle enables precise control over the etching direction and photoresist modification, achieving high feature accuracy without requiring multiple patterning cycles.
3Speed
If the angle of the radical beam is decreased to be closer to perpendicular, then etching speed increases, but angular control of reactive neutrals becomes more difficult
Solution Approach 1:
Different channels in the extraction plate are designed with different local geometries and orientations tailored to specific etching requirements. Each channel provides locally optimized angular control for its specific function, allowing perpendicular beams for high-speed etching where needed while maintaining angular control capability where precision patterning is required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control over the angle and distribution of reactive neutral species, improving the etching process by reducing bridge defects and contact resistance, and allowing for more efficient and effective patterning of complex semiconductor structures.
Implementation Method 1
a plasma source operable to generate a plasma within a plasma chamber
Implementation Method 2
specially shaped channels that reflect species outside a specified angle range
Data Source
AI summary
Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a plurality of channels for delivering one or more radical beams to a workpiece, wherein each of the plurality of channels has a lengthwise axis oriented at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece, wherein each channel of the plurality of channels has a channel length and a channel width, and wherein the channel width varies along the channel length.