Cavity Fill via Angled Ion Sputtering

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Solution Overview

Problem

Existing electronic device processing techniques, such as chemical vapor deposition, face challenges in filling small structures like trenches or vias with high aspect ratios, often resulting in overhangs and the formation of seams or buried holes due to non-conformal coating.

Innovation Solution

A method involving the use of a combination of neutral reactive precursor species and directed energetic ions, where the ions are angled to strike the sidewall portions of the cavity at a non-zero angle, promoting a bottom-up fill process by redistributing the fill material from the sidewall to the lower surface, avoiding overhangs and seams.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If chemical vapor deposition is used to fill cavities, then coating occurs on exposed surfaces, but overhangs form leading to seams or buried holes in high aspect ratio trenches

Engineering Contradiction:
Improvefill qualityVSAvoidseam formation
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies asymmetry by directing ions at a non-zero angle of incidence relative to the substrate normal. This asymmetric ion bombardment preferentially removes material from upper cavity regions while allowing deposition to occur at lower regions, creating a bottom-up fill pattern that prevents overhangs and seams. The angled ion flux breaks the symmetry of conventional conformal deposition, enabling selective material redistribution.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent inverts the conventional deposition approach by using ion bombardment to preferentially remove material from regions that would normally accumulate material (the upper cavity regions). This inverse approach, where erosion occurs where deposition would normally dominate, prevents overhang formation and enables seamless cavity filling from the bottom up rather than top down.

Inventive Principle:
Principle #13The other way round (Inversion)

2Quantity of substance

If conformal coating is applied to high aspect ratio cavities, then coating covers all exposed surfaces, but material accumulates on sidewalls forming overhangs

Engineering Contradiction:
Improvematerial distributionVSAvoidoverhang formation
Core Design Contradiction:
Quantity of substanceVSShape

Solution Approach 1:

The patent applies local quality by creating spatially non-uniform material distribution through angled ion bombardment. The ion flux is directed at a non-zero angle, causing preferential material removal from specific regions (upper cavity and sidewall portions) while preserving or enhancing deposition in other regions (lower cavity). This local differentiation of material removal and deposition rates prevents uniform overhang formation and enables controlled bottom-up filling.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the ion incidence angle parameter from zero (normal incidence) to a non-zero angle. This parameter change fundamentally alters the material transport dynamics, causing ions to strike the substrate at an angle that preferentially affects upper cavity regions. The modified incidence angle parameter enables selective sputtering that redistributes material vertically, preventing horizontal overhang accumulation.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If angled ions are directed at the cavity, then material is removed from sidewalls, but the cavity must be filled simultaneously

Engineering Contradiction:
Improvecavity fill uniformityVSAvoidmaterial removal
Core Design Contradiction:
Manufacturing precisionVSLoss of substance

Solution Approach 1:

The patent converts the harmful effect of ion bombardment (material removal) into a beneficial process. The angled ion flux, which would normally be considered erosive and wasteful, is instead used to selectively remove material from upper cavity regions where it would form defects. The sputtered material is redistributed and redeposited in lower cavity regions, transforming material loss into a controlled redistribution mechanism that enables seamless filling.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent uses angled ion bombardment as an intermediary mechanism to mediate between deposition and final cavity fill quality. The ions act as a mediating agent that redistributes deposited material, transferring it from upper regions where it would form overhangs to lower regions where it contributes to seamless filling. This intermediary process couples deposition and erosion into a unified bottom-up fill mechanism.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures a seamless fill of cavities by preferentially depositing material in lower regions, preventing the formation of seams or buried holes, and efficiently filling high-aspect-ratio features without overhangs.

Implementation Method 1

a plasma generator coupled to the plasma chamber and generating a plasma comprising sputtering gas derived from the sputtering gas flow and a reactive species derived from the reactive precursor gas flow

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

the reactive species generating a fill material at the substrate

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 3

an angled ion beam is directed to the substrate through the extraction plate, the angled ion beam comprising angled ions incident at a surface of the substrate at a non-zero angle of incidence

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS10546730B2Filling a cavity in a substrate using sputtering and deposition
Publication Date: 2020.01.28 VARIAN SEMICON EQUIP ASSC INC
  • US10546730B2 patent drawing
  • US10546730B2 patent drawing
  • US10546730B2 patent drawing

AI summary

A method may include providing a cavity in a surface of a substrate, the cavity comprising a sidewall portion and a lower surface; directing depositing species to the surface of the substrate, wherein the depositing species condense to form a fill material on the sidewall portion and lower surface; and directing angled ions at the cavity at a non-zero angle of incidence with respect to a perpendicular to a plane defined by the substrate, wherein the angled ions strike an exposed part of the sidewall portion and do not strike the lower surface, and wherein the cavity is filled by the fill material in a bottom-up fill process.