Angled Ion Extraction Assembly With Substrate Dithering Uniformity
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Solution Overview
Problem
Existing methods for generating angled ion beams in semiconductor processing suffer from non-uniform ion distribution due to varying substrate distances from the ion beam source, leading to process variations and limitations in current extraction.
Innovation Solution
A plasma processing apparatus with a dithering mechanism that moves the substrate relative to the extraction plate, combined with a substrate support pedestal that adjusts the angle and dithering, ensures uniform ion delivery by varying the duty cycle and using beam blockers to control ion flux.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the platen is tilted to generate an angled ion beam, then the ion beam strikes the substrate at a non-zero angle, but various regions of the substrate are at different distances from the ion beam source causing process variations
Solution Approach 1:
The system dynamically adjusts the extraction plate angle relative to the substrate, allowing the ion beam extraction angle to be varied independently of substrate position. This dynamic adjustment enables angled ion beam generation while maintaining uniform substrate positioning, resolving the contradiction between achieving angled incidence and maintaining process uniformity.
2Ease of operation
If the ion beam source is rotated to achieve the desired angle, then the extraction angle is adjusted, but similar shortcomings occur with substrate distance variations
Solution Approach 1:
The system separates the functions of angle control and position control into independent components. The extraction plate can be independently angled to control beam direction, while the substrate remains in a fixed, uniform position. This functional segmentation allows angle adjustment without compromising substrate uniformity.
3Ease of operation
If the plasma sheath shape is controlled to vary ion extraction angle, then angled ion beams are achieved, but limitations exist in the amount of current that may be extracted
Solution Approach 1:
The system changes the geometric parameter of the extraction plate (its angle relative to the substrate) to control ion extraction angle, rather than relying on plasma sheath shape control. This parameter change enables independent optimization of both extraction angle and current capability, overcoming the limitations of sheath-based methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves high-throughput, uniform ion processing across the substrate surface, reducing process variations and enhancing productivity with improved ion beam uniformity and reduced foreign material sputtering.
Implementation Method 1
ions are extracted through the opening and delivered to a substrate at a non-zero angle relative to a perpendicular extending from the substrate
Implementation Method 2
an actuator operable to dither the substrate relative to the fixed or moveable plates as the ions are extracted through the opening
Data Source
AI summary
Disclosed herein are systems and methods for high throughput angled ion processing. In one approach, a processing apparatus may include a chamber operable to contain a plasma, the chamber defined by a plurality of sidewalls, a first end wall, and a second end wall opposite the first end wall, an extraction assembly coupled to the second end wall, the extraction assembly comprising a plurality of apertures, wherein ions are extracted through the plurality of apertures are delivered to a substrate at a non-zero angle relative to a perpendicular extending from the substrate, and wherein the substrate is positioned external to the chamber. The processing apparatus may further include an actuator operable to shift the substrate relative to the moveable plates as the ions are extracted through the plurality of apertures.