Angled Ion Implantation for Semiconductor Doped Layer Formation
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Solution Overview
Problem
Conventional ion implantation methods for forming doped layers in semiconductor structures result in increased damage to the semiconductor layer due to perpendicular application, which limits the depth and efficiency of doping, especially as the required energy increases for deeper implantation.
Innovation Solution
A semiconductor structure and manufacturing method involving a stacked structure with conductive and insulating strips, where ion implantation is applied at an acute angle to the side wall of the stacked structure, allowing for reduced damage and deeper doping without the need for high energy, using a tilted carrier and carefully designed insulating strips to control the implantation direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation is applied perpendicularly to the top portion of the semiconductor layer, then the doping concentration can be changed, but the damage to the semiconductor layer becomes more serious as the implantation depth increases
Solution Approach 1:
The patent changes the implantation direction from perpendicular (vertical dimension) to oblique (introducing angular dimension), allowing ions to enter the semiconductor layer at an angle between 0-45 degrees relative to the side wall. This dimensional change enables deeper doping while reducing direct impact damage to the layer structure.
Solution Approach 2:
The patent introduces an insulating layer as an intermediary medium between the ion implantation source and the semiconductor layer. This insulating layer protects the semiconductor layer from direct ion impact damage while still allowing doping to occur, effectively mediating the harmful interaction.
2Length of stationary object
If higher energy is used to increase implantation depth, then deeper doping can be achieved, but the damage to the semiconductor layer increases
Solution Approach 1:
By changing from vertical to oblique implantation geometry, the patent achieves deeper effective doping depth without proportionally increasing the impact energy. The oblique angle distributes the ion energy over a longer path, enabling deeper penetration with reduced peak damage.
Solution Approach 2:
The patent changes the implantation angle parameter from 90 degrees (perpendicular) to between 0-45 degrees (oblique). This parameter change fundamentally alters the energy deposition profile, allowing deeper doping at lower effective impact energies and reducing layer damage.
3Ease of manufacture
If perpendicular ion implantation is used, then the process is simple, but the doping depth and efficiency are limited
Solution Approach 1:
The patent introduces angular positioning of the semiconductor layer or implantation source, adding rotational dimension to the otherwise simple vertical implantation process. This maintains manufacturing simplicity while dramatically improving doping depth and efficiency through geometric optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of doped layers with reduced resistance and improved coverage, enhancing the electrical properties and memory capacity of semiconductor devices while minimizing damage to the semiconductor layer, thus addressing the limitations of traditional ion implantation techniques.
Implementation Method 1
a dosed layer is formed on a semiconductor layer by way of ion implantation to change the doping concentration
Data Source
AI summary
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a base, a stacked structure and a doped layer. The stacked structure is formed on the base, wherein the stacked structure comprises a plurality of conductive strips and a plurality of insulating strips, one of the conductive strips is located between adjacent two insulating strips, the stacked structure has a first side wall, and a long edge of the first side wall is extended along a channel direction. The doped layer is formed in the first side wall, wherein the doped layer is formed by an ion implantation applied to the first side wall, and an acute angle is contained between an implantation direction of the ion implantation and the first side wall.