Angled Ion Beam Selective Deposition for Semiconductor Patterned Substrates
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Solution Overview
Problem
Current methods for selective deposition in semiconductor devices face challenges in precise pattern placement and seamless bottom-up fill processes, particularly due to atomic layer deposition (ALD) poisoning and difficulties in controlling chemistry within deposition chambers, especially at the micrometer and nanometer levels.
Innovation Solution
The use of angled ions is employed to selectively deposit materials on substrates with patterned surfaces, where the angle of incidence and ion energy are controlled to generate different sputter yields on various surface regions, allowing for precise deposition on targeted areas without the need for masking, using a system that includes an ion source and a controller to adjust process parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If atomic layer deposition (ALD) poisoning is used for selective deposition, then selectivity is improved, but manufacturing precision deteriorates due to sensitive control requirements and pattern placement errors
Solution Approach 1:
The invention changes the deposition parameters by using ion beam sputtering instead of ALD chemistry, controlling ion angle and energy to achieve selective material removal and deposition. This physical approach avoids the sensitive chemical control requirements of ALD while maintaining selectivity through geometric and parametric control of the ion beam.
Solution Approach 2:
The invention replaces the chemical mechanism of ALD poisoning with a physical ion beam sputtering mechanism. By using directed ion beams at specific angles and energies, selective deposition is achieved through physical ejection and re-deposition of atoms rather than chemical modification, eliminating the need for sensitive chemical control while improving pattern placement precision.
2Ease of manufacture
If complex chemistry control is used within deposition chamber, then deposition selectivity is improved, but device complexity increases
Solution Approach 1:
The invention replaces complex chemical control systems with a physical ion beam system. Selectivity is achieved through the physical interaction of ions with the substrate at controlled angles and energies, eliminating the need for complex chemistry control while reducing device complexity. The ion beam system uses electromagnetic fields for control rather than complex chemical delivery and monitoring systems.
Solution Approach 2:
The invention changes from chemical parameter control (temperature, pressure, gas flow) to physical parameter control (ion energy, ion angle, beam current). This parameter transformation simplifies the control system while maintaining or improving deposition selectivity through the geometric and energetic control of the ion beam interaction with different surface regions.
3Manufacturing precision
If angled ions are used for selective deposition, then manufacturing precision is improved, but use of energy increases
Solution Approach 1:
The invention uses partial action by directing ion beams at specific angles that interact selectively with certain surface regions while leaving others unaffected. By controlling the ion beam angle and scanning pattern, energy is applied only where needed for selective deposition, reducing total energy consumption while maintaining high manufacturing precision through targeted material ejection and re-deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables maskless selective deposition with high precision, allowing for the formation of deposits only on specific surface regions while avoiding others, enhancing the control over device structures and reducing errors in pattern placement.
Implementation Method 1
directing angled ions to the patterned substrate surface... the angled ions may generate a first sputter yield on the first surface region and a second sputter yield on the second surface region
Data Source
AI summary
A method includes providing a substrate, where the substrate has a patterned substrate surface, wherein the patterned substrate surface comprises a first surface region and a second surface region. The method may also include directing a depositing species to the patterned substrate surface; and directing angled ions to the patterned substrate surface, wherein the depositing species forms a deposit on the first surface region and does not form a deposit on the second surface region.