Angled Line-and-Space Marks for Imprint Alignment
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Solution Overview
Problem
Current semiconductor device manufacturing methods face challenges in achieving precise alignment and overlay misalignment measurement during the imprint process, as existing mark designs do not effectively enhance the precision of these processes.
Innovation Solution
The use of line-and-space patterns on marks arranged on both the template and wafer, where the patterns extend at angles other than 90 degrees, allowing for precise alignment and overlay misalignment measurement by adjusting the relative positions of these marks to achieve accurate positional alignment and measurement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional mark designs are used for alignment and overlay measurement, then the manufacturing process can proceed, but the precision of alignment and overlay misalignment measurement is insufficient
Solution Approach 1:
The mark is divided into multiple line-and-space patterns with different orientations (first direction and second direction). Each pattern segment serves a specific measurement function, allowing independent optimization of alignment and overlay measurement capabilities without compromising the other.
Solution Approach 2:
The invention introduces angular orientation as an additional dimension for measurement. By arranging line-and-space patterns at different angles (first direction and second direction), the system can measure alignment and overlay misalignment in multiple dimensional orientations, thereby improving measurement precision beyond conventional single-orientation marks.
2Measurement precision
If line-and-space patterns are arranged at angles other than 90 degrees, then alignment precision is improved, but the complexity of mark design and fabrication increases
Solution Approach 1:
The mark employs asymmetric line-and-space patterns with specific angular orientations rather than conventional symmetric 90-degree arrangements. This asymmetric design optimizes the optical interaction for precision measurement while the repetitive modular structure of lines and spaces maintains fabrication feasibility.
Solution Approach 2:
The invention changes the geometric parameters of the mark by using line-and-space patterns with specific pitch ratios and angular orientations. By optimizing these parameters (line width, space width, pitch, angle), the system achieves improved measurement precision while keeping the overall mark structure within standard fabrication capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the precision of alignment and overlay misalignment measurement, enabling more accurate transfer of patterns onto the semiconductor devices and enhancing the overall manufacturing process.
Implementation Method 1
FIG. 14 is a schematic diagram illustrating an example of moire patterns generated by marks according to the second embodiment
Data Source
AI summary
According to one embodiment, a mark is a mark arranged on a substrate and including a line-and-space pattern having a substantially constant pitch on the substrate, the mark including: a first mark in which the line-and-space pattern extends in a direction at an angle that is less than 90° or greater than 90° with respect to the first direction, the first mark including a pair of first patterns arranged at a distance in a first direction along the substrate or a first periodic pattern having a period in the first direction; and a second mark in which the line-and-space pattern extends in a direction at an angle that is less than 90° or greater than 90° with respect to the second direction, the second mark including a pair of second patterns provided in correspondence with the pair of first patterns and arranged at a distance in a second direction along the substrate and intersecting the first direction or a second periodic pattern provided in correspondence with the first periodic pattern and having a period in the second direction.