Angled Oxide Layer for Capacitor Array Stress Relief

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Solution Overview

Problem

Capacitor arrays in semiconductor structures are prone to damage due to localized stress caused by asymmetry in container profiles, leading to contact shorts.

Innovation Solution

A capacitance structure with a substrate, rod capacitors, and an oxide layer, where the rod capacitors are connected by supporting layers forming a trapezoid-like arrangement, and the oxide layer extends along a direction angled relative to the capacitors, reducing localized stress and preventing shorts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional capacitor array structure is used, then the manufacturing process is simple, but localized stress causes contact shorts and damages the semiconductor structure

Engineering Contradiction:

Improvecontact short preventionVSAvoidcapacitance structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies asymmetry by forming the oxide layer at an angle between 45-60 degrees relative to the horizontal plane, creating an asymmetric stress distribution pattern. This angled oxide layer configuration transforms the symmetric stress concentration problem into an asymmetric stress distribution that prevents localized stress accumulation and contact shorts while maintaining structural integrity

Inventive Principle:

Principle #4Asymmetry

Solution Approach 2:

The patent introduces a new dimensional parameter by forming the oxide layer at an inclined angle rather than horizontally. This angular dimension (third dimension beyond the horizontal plane) creates a three-dimensional stress distribution pattern that eliminates the localized stress concentration occurring in conventional planar structures, thereby preventing contact shorts

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If the oxide layer is formed horizontally, then the manufacturing process is simple, but localized stress accumulates and causes contact shorts

Engineering Contradiction:

Improvestress distribution uniformityVSAvoidoxide layer formation complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the critical parameter of oxide layer formation angle from the conventional horizontal (0 degrees) to an inclined angle between 45-60 degrees. This parameter change fundamentally alters the stress distribution characteristics, transforming concentrated localized stress into distributed uniform stress across the capacitor array, thereby preventing contact shorts while remaining manufacturable through standard angled deposition techniques

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS11588011B2Method of capacitance structure manufacturing

Publication Date: 2023.02.21 NAN YA TECH

AI summary

A method of capacitance structure manufacturing includes following operations. A plurality of insulating tubes is formed over a substrate and perpendicular to the substrate. A first supporting layer and a second supporting layer above the first supporting layer are formed and connect the insulating tubes. The first supporting layer protrudes from the second supporting layer. Conductive material is filled in the insulating tubes to form rod capacitors forming a capacitor array and the capacitor array is covered by an oxide layer from its top to the substrate. The oxide layer is formed along the first supporting layer and the second supporting layer such that the oxide layer extends along a direction having an angle with respect to the substrate.