Angled Vapor Chamber Package Lid for Immersion Cooling Heat Spreading
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Solution Overview
Problem
Semiconductor packages, particularly high-performance computing (HPC) packages, face challenges in efficiently dissipating heat due to the smooth surface of traditional copper lids, which limits vapor bubble formation and heat spreading, leading to inadequate heat dissipation in two-phase immersion cooling systems.
Innovation Solution
A semiconductor package design featuring a package lid with a vapor chamber base having an angled portion and an enhancement surface, including a textured surface with metal mesh or powder, such as copper mesh or powder, formed by a sintering process, to enhance heat spreading and bubble formation for improved heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a traditional smooth copper lid is used, then the manufacturing process is simple, but heat dissipation efficiency is insufficient due to limited vapor bubble formation and heat spreading
Solution Approach 1:
The patent applies porous materials by forming a textured surface with metal mesh or powder (such as copper mesh or powder) on the vapor chamber base through a sintering process. This creates a porous structure that enhances vapor bubble formation and heat spreading, thereby improving heat dissipation efficiency while maintaining manufacturing feasibility through the sintering process
Solution Approach 2:
The patent employs composite materials by combining the vapor chamber base with metal mesh or powder to create a composite structure. This composite material approach enhances both heat spreading and bubble formation capabilities, resolving the contradiction between manufacturing simplicity and heat dissipation efficiency
2Device complexity
If a smooth copper lid is used, then the device structure is simple, but temperature distribution is non-uniform leading to inadequate cooling
Solution Approach 1:
The porous textured surface formed by sintering metal mesh or powder into the vapor chamber base creates multiple nucleation sites for vapor bubbles, which promotes uniform heat distribution across the surface. This reduces hot spots and achieves more uniform temperature distribution while maintaining a relatively simple overall device structure
Solution Approach 2:
The patent transitions from a two-dimensional smooth surface to a three-dimensional textured surface with metal mesh or powder embedded in the vapor chamber base. This dimensional change increases surface area and creates pathways for improved heat spreading, resulting in more uniform temperature distribution
3Loss of energy
If a textured surface with metal mesh or powder is formed by sintering, then heat spreading and bubble formation are enhanced, but the manufacturing process becomes more complex
Solution Approach 1:
The sintering process transforms the physical and chemical parameters of the metal mesh or powder, bonding it to the vapor chamber base through controlled heating. This parameter change approach enables the formation of an enhanced textured surface that improves heat transfer efficiency, while the sintering process itself provides a feasible manufacturing method despite increased complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design reduces junction-to-ambient resistance by at least 34.4% compared to traditional copper lids, providing more uniform temperature distribution and effective cooling during immersion cooling.
Implementation Method 1
transferred heat from a plate portion and an angled portion of a vapor chamber base of the package lid to the immersion coolant
Implementation Method 2
an enhancement surface, including a textured surface with metal mesh or powder, such as copper mesh or powder, formed by a sintering process, to enhance heat spreading and bubble formation
Implementation Method 3
immersing the semiconductor package in an immersion coolant... transferring heat from a plate portion and an angled portion of a vapor chamber base
Data Source
AI summary
A semiconductor package includes a package substrate, an interposer module on the package substrate, and a package lid on the interposer module and including a vapor chamber base, the vapor chamber base including a plate portion, and an angled portion extending at an angle from opposing ends of the plate portion. A method of cooling the semiconductor package may include locating the semiconductor package in an immersion cooling chamber, immersing the semiconductor package in an immersion coolant in the immersion cooling chamber such that a plate portion and an angled portion of a vapor chamber base of the package lid is immersed in the immersion coolant, and transferring heat from the plate portion and angled portion of the vapor chamber base to the immersion coolant to cool the semiconductor package.