Angular Beam Etching for Bottom-Up Gap Fill Seed Layers
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Solution Overview
Problem
Conventional selective deposition processes are time-consuming and expensive, requiring two process chambers, and there is a need for apparatus and methods to selectively form materials on substrate surfaces or within surface structures with high precision and efficiency.
Innovation Solution
A method involving an angular etching process using an angularly oriented beam of ions and/or radicals to selectively remove materials from the top of a surface structure without affecting the bottom, allowing for the formation of a seed layer at the bottom of a trench or via, which can be filled in a bottom-up manner using a single processing chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional selective deposition processes are used, then selective film formation is achieved, but the process is time-consuming and expensive requiring two process chambers
Solution Approach 1:
The patent combines the selective deposition and selective etching processes into a single integrated process chamber. The system uses a movable substrate holder that can be positioned to receive either a precursor gas for deposition or an angular ion beam for etching, eliminating the need for two separate chambers and reducing process time while maintaining selective film formation capability
Solution Approach 2:
The single process chamber is designed to perform multiple functions: it can conduct both selective deposition (using precursor gas exposure) and selective etching (using angular ion beam). The movable substrate holder and controllable beam/precursor delivery system enable the chamber to switch between different process modes, reducing equipment complexity and process time
2Reliability
If conventional selective deposition processes are used, then selective film formation is achieved, but it requires two process chambers making the process expensive
Solution Approach 1:
The patent combines the selective deposition and selective etching processes into a single integrated process chamber. The system uses a movable substrate holder that can be positioned to receive either a precursor gas for deposition or an angular ion beam for etching, eliminating the need for two separate chambers and reducing process time while maintaining selective film formation capability
Solution Approach 2:
The single process chamber is designed to perform multiple functions: it can conduct both selective deposition (using precursor gas exposure) and selective etching (using angular ion beam). The movable substrate holder and controllable beam/precursor delivery system enable the chamber to switch between different process modes, reducing equipment complexity and process time
3Manufacturing precision
If angular etching process is used, then precise selective etching is achieved, but sidewalls may be damaged
Solution Approach 1:
The patent employs a movable substrate holder that can be dynamically positioned and rotated during the angular ion beam etching process. By adjusting the substrate orientation and moving it through the angular beam, the system achieves precise etching control while distributing the ion beam impact to minimize sidewall damage. The dynamic positioning allows selective exposure of different surface areas to the angular beam
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise and efficient selective etching of materials, reducing the need for multiple chambers and minimizing damage to sidewalls and bottoms, thereby improving production yield and uniformity on larger substrate surfaces.
Implementation Method 1
exposing the semiconductor substrate to an angular etching process to remove a first material from a field of the semiconductor substrate and a top portion of the sidewalls of the gap, leaving the first material on the bottom of the gap
Implementation Method 2
plasma etching the first material from the substrate surface and the at least one sidewall leaving a first material seed layer on the bottom of the gap
Data Source
AI summary
Methods of filling a gap in a semiconductor substrate are described. A first material is formed on the substrate and in a gap formed in the substrate surface. The substrate is exposed to an angular etching process to remove the first material from the field of the substrate and a top portion of the sidewalls of the gap, leaving the first material in the bottom of the gap.