Angular Energy Filter for Ion Beam Incidence Control
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Solution Overview
Problem
Ion implantation systems face inefficiencies in achieving uniform ion implantation across three-dimensional structures due to the need for mechanical tilting of the workpiece to vary the ion beam angle, which reduces throughput and increases costs.
Innovation Solution
An ion implantation system that uses an angular energy filter and mechanical apparatus to concurrently scan the ion beam and vary its angle of incidence relative to the workpiece, allowing for continuous and precise angle adjustments during implantation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the workpiece is mechanically tilted to vary the ion beam angle, then the implantation angle can be changed to achieve uniform doping in 3-D structures, but the throughput decreases due to idle time during mechanical adjustment
Solution Approach 1:
The patent replaces the mechanical tilting system with an electrostatic deflection system. Instead of physically rotating the workpiece or beamline, electrostatic plates deflect the ion beam to change its incident angle. This substitution eliminates mechanical inertia and adjustment time, allowing continuous angle variation during implantation without interrupting the ion beam, thereby maintaining high throughput while achieving uniform doping in 3-D structures.
Solution Approach 2:
The patent implements dynamic angle adjustment by using electrostatic deflection plates that can change the ion beam angle in real-time during the implantation process. The angle is no longer fixed or mechanically stepped but can be continuously varied dynamically, allowing the system to adapt the incident angle on-the-fly to match the complex geometry of 3-D structures while maintaining continuous ion beam delivery.
2Adaptability or versatility
If the ion beam angle is varied mechanically, then different incident angles can be achieved for complex structures, but the system complexity and cost increase
Solution Approach 1:
The patent replaces complex mechanical tilting mechanisms with a simpler electrostatic deflection system. The electrostatic plates require only electrical control signals to change beam angle, eliminating mechanical joints, motors, and positioners. This reduces system complexity while maintaining or enhancing angle variation capability for complex 3-D structures.
Solution Approach 2:
The patent changes the control parameter from mechanical position/angle to electrical voltage. By varying the voltage applied to electrostatic deflection plates, the ion beam angle is controlled through electrical parameters rather than mechanical ones. This parameter change simplifies the control system and reduces mechanical complexity while providing precise and versatile angle adjustment capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more uniform dopant profiles in three-dimensional structures while significantly increasing throughput by decoupling workpiece scanning from mechanical tilting, allowing for faster and more precise angle variations.
Implementation Method 1
The angular energy filter may include one or more electrostatic deflectors
Implementation Method 2
The angular energy filter may include one or more magnetic deflectors
Implementation Method 3
an ion source ionizes a desired dopant element, which is extracted from the source in the form of an ion beam of desired energy
Implementation Method 4
a beamline assembly including a mass analysis apparatus for mass resolving the ion beam using magnetic fields
Data Source
AI summary
An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.