Annealed Cobalt Plug for Semiconductor Contact
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Solution Overview
Problem
Current semiconductor contact structures face challenges in achieving low electric resistance and uniform lattice structures due to dislocations, voids, and seam-holes in cobalt plugs, which affect the reliability and efficiency of electrical connections.
Innovation Solution
Forming a cobalt plug over a silicide in a semiconductor device and annealing it at a temperature between 200° C to 800° C for a duration of 10 s to 600 s, exposing it to gases like Ar, H2, N2, or NH3 to create a repaired lattice structure with reduced dislocations and voids, thereby forming an annealed cobalt plug with improved conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cobalt plug is formed in semiconductor contact structure, then electrical connection is established, but dislocations and voids in lattice structure increase electric resistance
Solution Approach 1:
The patent applies parameter changes by controlling the deposition conditions of the cobalt plug, including adjusting deposition temperature, pressure, and gas flow rates during physical vapor deposition. These parameter optimizations minimize lattice dislocations and void formation, reducing electric resistance while maintaining reliable electrical connections in the contact structure.
2Manufacturing precision
If annealing process is applied to cobalt plug, then lattice structure is repaired and conductivity is improved, but process complexity and manufacturing time increase
Solution Approach 1:
The patent employs preliminary action by optimizing the initial deposition parameters of the cobalt plug to pre-establish a more uniform lattice structure with fewer dislocations and voids. This preliminary optimization reduces the severity of subsequent annealing required, thereby improving lattice uniformity and conductivity while minimizing the added process complexity and manufacturing time.
3Ease of manufacture
If conventional deposition methods are used for cobalt plug, then manufacturing process is simple, but lattice dislocations and seam-holes increase electric resistance
Solution Approach 1:
The patent optimizes deposition parameters including temperature, pressure, and gas composition during physical vapor deposition to achieve a balance between manufacturing simplicity and electrical connection reliability. These controlled parameter changes reduce lattice dislocations and seam-holes, lowering electric resistance while maintaining a relatively simple deposition process suitable for semiconductor manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The annealed cobalt plug exhibits reduced electric resistance and a more uniform lattice structure, enhancing the reliability and efficiency of electrical connections within the semiconductor device.
Implementation Method 1
annealing it at a temperature between 200° C to 800° C for a duration of 10 s to 600 s
Implementation Method 2
annealing the cobalt plug at a first temperature for a first duration while exposing the cobalt plug to a first gas
Data Source
AI summary
A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.