Annular Protection Diode Layout for Higher ESD Resistance
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Solution Overview
Problem
Existing semiconductor devices face challenges in enhancing electrostatic discharge (ESD) resistance and manufacturing complexity due to limitations in the design and configuration of protection diodes within the semiconductor structure.
Innovation Solution
The semiconductor device incorporates an annularly shaped second semiconductor layer and wiring layers to form a protection diode that surrounds the first semiconductor layer, increasing the diode length and contact length, and allowing for improved ESD resistance while simplifying the manufacturing process by sharing connection portions across the insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional protection diode structures are used, then manufacturing process is simpler, but ESD resistance is insufficient
Solution Approach 1:
The protection diode structure transitions from a planar configuration to a three-dimensional stacked arrangement. The second semiconductor layer is positioned above the first semiconductor layer, with wiring layers connecting them vertically through insulating layers. This vertical stacking increases the effective diode length and contact length without proportionally increasing the planar area, thereby improving ESD resistance while controlling device footprint.
Solution Approach 2:
The patent implements a nested structure where the second semiconductor layer is positioned within the vertical space above the first semiconductor layer. The wiring layers are embedded within insulating layers that surround and connect the semiconductor layers. This nesting approach maximizes the use of vertical space to increase diode length without proportionally increasing the overall device area.
2Reliability
If multiple wiring layers are formed separately, then connection reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent combines the formation of multiple wiring layers and insulating layers into an integrated manufacturing process. The first and second wiring layers are formed in sequence with their respective insulating layers, creating a stacked configuration. This merging of layers into a unified structure reduces the number of separate manufacturing steps compared to forming multiple discrete wiring layers, while maintaining connection reliability through the integrated design.
Data Source
AI summary
A semiconductor device includes: a first semiconductor layer of a first conductivity type; at least one second semiconductor layer of a second conductivity type formed in the first semiconductor layer to have an annular shape in plan view; an insulating layer formed on the first semiconductor layer; a first metal layer and a second metal layer formed on the insulating layer and spaced apart from each other; a second wiring layer provided in the insulating layer and configured to electrically connect an inner region of the first semiconductor layer surrounded by the at least one second semiconductor layer and the second metal layer; and a first wiring layer provided in the insulating layer and configured to electrically connect an outer region of the first semiconductor layer on the opposite side from the inner region with respect to the at least one second semiconductor layer and the first metal layer.