Annular Frame Semiconductor Package for Thermal Warpage Relief
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Solution Overview
Problem
Semiconductor packages face warping or cracking due to differing coefficients of thermal expansion (CTEs) of various materials during the packaging process, leading to potential damage in electrical connections and reduced reliability, especially in larger packages.
Innovation Solution
A semiconductor package structure with an annular frame and retracted regions at its corners, along with an adhesive layer and stress buffer layers, is designed to manage thermal expansion mismatch, featuring a substrate with wiring and bump structures for secure electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor package uses materials with different coefficients of thermal expansion (CTEs), then electrical connection and functionality are achieved, but warping or cracking occurs during packaging due to thermal stress
Solution Approach 1:
The annular frame is divided into multiple corner regions that are truncated or removed, creating segmented stress relief zones. This segmentation allows different parts of the frame to independently accommodate thermal expansion forces, preventing stress concentration that would cause warping or cracking while maintaining the overall structural integrity and electrical connection reliability.
Solution Approach 2:
Corner portions of the annular frame are truncated or removed to extract stress concentration points. By taking out these vulnerable corner regions, the patent eliminates the locations most prone to warping and cracking under thermal stress, while the remaining frame structure continues to provide necessary mechanical support and electrical connection stability.
2Area of stationary object
If the package size is increased to 50 mm×50 mm or larger, then functional requirements are met, but thermal expansion stress and warping are exacerbated
Solution Approach 1:
For large-area packages, the annular frame is segmented by truncating corner regions, creating multiple independent stress management zones. This segmentation allows each section of the frame to independently respond to thermal expansion forces, preventing cumulative stress across the large package area that would otherwise cause significant warping.
Solution Approach 2:
The frame structure is modified locally at corner regions with truncation, creating zones with different mechanical properties. These locally modified corners have reduced stiffness to accommodate thermal stress, while the rest of the frame maintains its structural integrity, enabling large package areas to resist warping effectively.
3Strength
If a complete annular frame is used to provide structural support, then mechanical strength is improved, but stress concentration at corners causes warping or cracking
Solution Approach 1:
Corner portions of the annular frame are truncated to extract the stress concentration points that would otherwise lead to warping or cracking. This removal of corner material eliminates the harmful stress concentration effect while the remaining frame structure maintains sufficient mechanical strength through its continuous annular configuration and optimized corner geometry.
Solution Approach 2:
The truncation of corner regions converts the harmful effect of stress concentration into a beneficial stress relief mechanism. By intentionally removing corner material, the design creates controlled stress distribution patterns that prevent warping and cracking, transforming what would be a structural weakness into a protective feature that enhances overall package reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces warping and cracking, enhancing the reliability and heat dissipation of semiconductor packages by compensating for thermal expansion differences and maintaining secure electrical connections.
Implementation Method 1
The semiconductor package may be highly stressed due to the different coefficients of thermal expansion (CTEs) of the various substrate and semiconductor die materials
Implementation Method 2
an adhesive layer between the annular frame and the first surface of the substrate
Data Source
AI summary
A semiconductor package structure includes a substrate having a substrate having a first surface and second surface opposite thereto, wherein the substrate comprises a wiring structure. The structure also has a first semiconductor die disposed on the first surface of the substrate and electrically coupled to the wiring structure, and a second semiconductor die disposed on the first surface and electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are arranged in a side-by-side manner. A molding material surrounds the first semiconductor die and the second semiconductor die, wherein the first semiconductor die is separated from the second semiconductor die by the molding material. Finally, an annular frame mounted on the first surface of the substrate, wherein the annular frame surrounds the first semiconductor die and the second semiconductor die.