Annular Gas Ring Nozzles for Uniform Distribution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor process chambers face challenges in achieving precise control over gas distribution, mixing, and concentration uniformity, which is crucial for the shrinking dimensions of semiconductor features in modern electronics.
Innovation Solution
The design incorporates a process chamber with a gas ring featuring annular nozzles arranged in circular arrays to deliver gases, an exhaust vent coupled to an exhaust device for low-pressure creation, and a rotatable substrate support with showerheads to ensure uniform gas flow and distribution over the substrate, promoting a swirling motion and longer residence times for gases above the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional gas delivery systems are used in process chambers, then the structure is simpler, but gas distribution uniformity and concentration control are insufficient
Solution Approach 1:
The gas delivery system is segmented into multiple independent nozzle arrays arranged in circular patterns at different radial positions. Each nozzle can be independently controlled to deliver gas, allowing precise local adjustment of gas distribution across the substrate surface, thereby achieving uniform gas concentration without requiring a completely complex system redesign
Solution Approach 2:
Different regions of the gas delivery system are designed with different nozzle configurations and gas delivery rates. The nozzles are arranged in circular arrays with varying radial positions to provide locally optimized gas distribution, ensuring that each area of the substrate receives the appropriate gas concentration for uniform film deposition
2Manufacturing precision
If gas residence time above substrate is increased to improve film quality, then deposition uniformity improves, but unwanted deposition on chamber walls increases
Solution Approach 1:
The exhaust device is positioned to extract gases and radicals from the processing region before they can deposit on chamber walls. The exhaust system is strategically located to remove harmful species from the gas phase, preventing unwanted deposition while maintaining appropriate gas residence time for quality film formation
Solution Approach 2:
Gases and radicals that would otherwise cause unwanted deposition on chamber walls are redirected toward the substrate where they contribute to film formation. The system converts potentially harmful gas-phase species into beneficial deposition materials by controlling flow patterns and exhaust positioning to direct reactive species toward the substrate surface
3Productivity
If multiple substrate holders are processed simultaneously to increase productivity, then production efficiency improves, but gas distribution control becomes more difficult
Solution Approach 1:
The gas delivery system is segmented into multiple independent nozzle arrays, with each array capable of being independently controlled. This segmentation allows different gas flow rates and compositions to be delivered to different substrate holders simultaneously, maintaining precise gas concentration control even when processing multiple substrates in parallel
Solution Approach 2:
The circular nozzle arrays are designed to serve multiple substrate holders simultaneously through their radial arrangement and rotational symmetry. The same nozzle array structure can deliver gas to different angular positions around the chamber, providing universal gas delivery capability that scales with the number of substrates being processed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances gas uniformity and control, reducing unwanted deposition and improving film quality by effectively removing gases and radicals, thereby increasing production efficiency and reducing cleaning frequencies.
Implementation Method 1
an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region
Implementation Method 2
a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region
Implementation Method 3
promoting a swirling motion and longer residence times for gases above the substrate
Data Source
AI summary
A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.