Annular Heating Device for Semiconductor Substrate Uniformity
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Solution Overview
Problem
Existing heating chambers in semiconductor processing face issues with non-uniform temperature distribution across substrates due to discrete heating bulb arrangements, leading to uneven heating and reduced processing capacity, as they can only process a limited number of substrates efficiently.
Innovation Solution
A heating chamber with an annular heating device that surrounds the substrate cassette, allowing multiple substrates to be heated simultaneously in a vertical direction, ensuring temperature uniformity through a circumferentially arranged plurality of heating tubes and a substrate cassette lifting device for efficient processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If discrete heating bulbs are arranged to heat substrates, then heating function is achieved, but temperature uniformity across substrates deteriorates
Solution Approach 1:
The heating system is segmented into multiple independent heating bulbs arranged in a specific pattern (e.g., alternating positions). Each heating bulb operates independently to provide localized heating, and their combined effect achieves uniform temperature distribution across multiple substrates without requiring a complex continuous heating source.
Solution Approach 2:
The heating arrangement transitions from a single-plane discrete bulb arrangement to a multi-dimensional configuration where heating bulbs are positioned at different heights and angular positions around the substrate cassette. This spatial distribution in multiple dimensions enables uniform thermal radiation across all substrate surfaces simultaneously.
2Productivity
If multiple substrates are processed simultaneously, then productivity is improved, but temperature control uniformity deteriorates
Solution Approach 1:
The substrate processing system is segmented into multiple independent heating zones, with heating bulbs positioned to create distinct thermal regions for different substrate layers. Each zone can be independently controlled to maintain uniform temperature across all substrates even when processed simultaneously, preventing thermal interference between adjacent substrates.
Solution Approach 2:
A vacuum chamber serves as an intermediary medium that enables simultaneous heating of multiple substrates while maintaining uniform temperature distribution. The vacuum environment acts as a thermal isolation medium that prevents convective heat transfer between substrates, allowing radiant heating to dominate and achieve uniform heating across all substrates simultaneously.
3Temperature
If heating time is extended to improve temperature uniformity, then processing quality is improved, but production efficiency deteriorates
Solution Approach 1:
The heating bulbs are pre-positioned in optimized locations and pre-configured to provide maximum thermal efficiency from the start of the heating cycle. The alternating arrangement pattern is designed in advance to ensure that heat distribution is optimized before heating begins, allowing uniform temperature to be achieved faster without extending the heating duration.
Solution Approach 2:
The heating system utilizes variable power parameters for different heating bulbs, allowing dynamic adjustment of heating intensity. By changing the power parameters of individual bulbs during the heating process, the system can achieve uniform temperature distribution more quickly, reducing the overall heating time while maintaining temperature uniformity across all substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances processing capacity by simultaneously heating multiple substrates while maintaining temperature uniformity across each substrate, thereby improving the overall efficiency and consistency of the semiconductor processing apparatus.
Implementation Method 1
the heating bulbs 6 are located below the reflection plate 2 to heat the substrate 4 by way of thermal radiation
Data Source
AI summary
A heating chamber and a semiconductor processing apparatus are provided. The heating chamber includes: a heating barrel (17) disposed in the heating chamber and located above a substrate transferring window; an annular heating device (15) disposed around an inner side of the heating barrel and configured to radiate heat from a periphery to an interior of the heating barrel; a substrate cassette (14) configured to bear multiple layers of substrates and allow the multiple layers of substrates to be arranged at intervals in an axial direction of the heating barrel; and a substrate cassette lifting device (13) configured to drive the substrate cassette to move up into an internal spare defined by the annular heating device, or move down to a position corresponding to the substrate transferring window.