Annular Pressure Adjustment Structure for Stable Plasma Processing
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Solution Overview
Problem
Existing plasma processing apparatuses struggle to adjust the internal pressure of the processing chamber in a short time, particularly in inductively coupled plasma generators with increased capacity, which is crucial for miniaturization of semiconductor patterns.
Innovation Solution
A plasma processing apparatus with a second pressure adjusting mechanism comprising an upper and lower annular plate and a movable structure, controlled by an actuator, allows for precise and rapid adjustment of internal pressure by varying the distance between these plates and utilizing a bypass gap to maintain stable plasma processing conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the capacity of inductively coupled plasma generator is increased for miniaturization of semiconductor patterns, then the plasma processing capability is improved, but the time required for pressure adjustment increases
Solution Approach 1:
The exhaust system is segmented into multiple independent exhaust ports distributed around the processing chamber. Each exhaust port can be independently controlled by its own shutter mechanism, allowing selective opening/closing of specific exhaust paths. This segmentation enables rapid pressure adjustment by activating only the necessary exhaust ports rather than relying on a single large exhaust system, thus reducing pressure adjustment time while maintaining plasma processing capability.
Solution Approach 2:
The exhaust system incorporates dynamically controllable shutters that can rapidly open and close to adjust the exhaust flow rate in real-time. This dynamic control mechanism allows the system to quickly respond to pressure changes and adjust the internal pressure of the processing chamber within a short time frame, even when the plasma generator has increased capacity for miniaturization processing.
2Productivity
If the internal pressure of the processing chamber is adjusted rapidly, then the productivity is improved, but the plasma processing stability deteriorates
Solution Approach 1:
Different exhaust ports are positioned at different locations around the processing chamber to provide localized exhaust control. By selectively opening specific exhaust ports based on the local pressure conditions and processing requirements, the system can achieve rapid overall pressure adjustment while maintaining stable plasma conditions through localized, targeted exhaust rather than uniform exhaust across the entire chamber.
Solution Approach 2:
The system incorporates pressure sensors that continuously monitor the internal pressure of the processing chamber and provide feedback to the control mechanism. This feedback enables the shutters to be dynamically adjusted in real-time, allowing the system to rapidly adjust pressure while automatically maintaining stability by responding to actual pressure conditions, thus preventing plasma processing instability during rapid pressure changes.
3Device complexity
If the exhaust system is simplified, then the device complexity is reduced, but the pressure control precision deteriorates
Solution Approach 1:
Multiple exhaust ports serve universal functions of both rough pumping and fine pressure control. The same distributed exhaust ports that provide rapid pressure reduction also enable precise pressure control through selective opening/closing combinations. This multi-functionality eliminates the need for separate complex pressure control mechanisms, maintaining simple device structure while achieving high pressure control precision through intelligent control of the universal exhaust ports.
Data Source
AI summary
A plasma processing apparatus includes: a plasma processing chamber, a substrate support disposed in the plasma processing chamber, an annular baffle plate disposed to surround the substrate support, the annular baffle plate having openings, a first annular plate disposed below the annular baffle plate with an inner end fixed to a sidewall of the substrate support, a movable structure disposed below the first annular plate, the movable structure including a cylindrical wall vertically disposed along a sidewall of the plasma processing chamber, a gap being formed between the cylindrical wall and the sidewall of the plasma processing chamber, and a second annular plate disposed on an upper end of an inner wall of the cylindrical wall, the second annular plate having an annular overlapping portion vertically overlapping a part of the first annular plate, and an actuator for vertically moving the movable structure.