Annular Relief Showerhead for Edge Plasma Uniformity
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Solution Overview
Problem
Conventional semiconductor processing chambers face challenges in achieving uniform film deposition across substrates due to temperature and flow non-uniformity, particularly at the edge regions, which affect device quality and symmetry.
Innovation Solution
The incorporation of a showerhead with annular grooves and/or ridges features, such as annular annular relief features in the showerhead, such as annular annular relief features in the showerhead, such as annular relief features in the showerhead, such as annular relief features, such as grooves and/or ridges, to alter a size of an inter-electrode gap between the showerhead and an RF mesh, adjusting plasma generation and deposition rates to enhance uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a showerhead with regular patterns of features is used to promote symmetry and uniformity, then film uniformity is improved, but the ability to tune recipes for on-wafer adjustments is limited
Solution Approach 1:
The showerhead incorporates regions with different aperture densities - higher aperture density in the center region and lower aperture density in the edge regions. This local variation in feature density allows different parts of the substrate to receive different gas flow characteristics, enabling both overall uniformity and localized tuning capability for edge plasma modulation
Solution Approach 2:
The showerhead is divided into distinct regions (center and edge regions) with different aperture patterns and densities. This segmentation allows independent optimization of gas distribution characteristics for different substrate areas, providing both symmetry through regular patterns within regions and adaptability through inter-region variations
2Ease of manufacture
If conventional showerhead designs are used, then manufacturing simplicity is maintained, but edge region deposition uniformity deteriorates
Solution Approach 1:
The showerhead incorporates regions with different aperture densities - higher aperture density in the center region and lower aperture density in the edge regions. This local variation in feature density allows different parts of the substrate to receive different gas flow characteristics, enabling both overall uniformity and localized tuning capability for edge plasma modulation
Solution Approach 2:
The aperture density parameter is varied across different regions of the showerhead. By changing the aperture density from center to edge regions, the gas flow distribution is optimized to compensate for edge effects, improving deposition uniformity while maintaining a relatively simple manufacturing approach
3Stability of the object's composition
If regular aperture distribution is used in the showerhead, then gas flow symmetry is improved, but plasma density control at edge regions is insufficient
Solution Approach 1:
The showerhead incorporates regions with different aperture densities - higher aperture density in the center region and lower aperture density in the edge regions. This local variation in feature density allows different parts of the substrate to receive different gas flow characteristics, enabling both overall uniformity and localized tuning capability for edge plasma modulation
Solution Approach 2:
The showerhead is divided into distinct regions (center and edge regions) with different aperture patterns and densities. This segmentation allows independent optimization of gas distribution characteristics for different substrate areas, providing both symmetry through regular patterns within regions and adaptability through inter-region variations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for controlled deposition at the edge region of a substrate, reducing plasma density and distribution effects, thereby improving film uniformity and maintaining edge region plasma generation.
Implementation Method 1
adjusting plasma generation and deposition rates to enhance uniformity
Implementation Method 2
controlled deposition at the edge region of a substrate
Data Source
AI summary
Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chambers may include a showerhead positioned supported atop the chamber body. The substrate support and a bottom surface of the showerhead may at least partially define a processing region within the semiconductor processing chamber. The showerhead may define a plurality of apertures through the showerhead. The bottom surface of the showerhead may define an annular groove or ridge that is positioned directly above at least a portion of the substrate support.